Progress Toward III–V Bismide Alloys for Near- and Midinfrared Laser Diodes

Abstract

The manufacturing industry is regarded as one of the most demanding verticals with respect to URLLC requirements. A Device-to-Device (D2D) communication system is a key enabler that has been introduced to support URLLC. To enhance spectrum utilisation, D2D links can share access of radio spectrum resources occupied by cellular users. Spectrum reuse may result in performance degradation due to mutual co-channel interference of co-existing cellular and D2D users. Resource sharing in a D2D-based cellular network for wireless industrial applications is investigated in this paper. The presented schemes aim to maximise the overall system throughput while maintaining the Quality of Service / Experience (QoS/ QoE) requirements. Interference is managed by jointly considering admission and power control based on the relative distance between devices. A priced-Deferred Acceptance (p-DA) scheme with an incentive-based stability is developed to match D2D users to cellular resources. Numerical simulations show that the p-DA scheme is able to achieve better performance than the conventional DA algorithm and is close in performance to the presented centralised optimisation approach.

Electrically injected GaAsBi/GaAs single quantum well laser diodes

“…It is worth noting that the value of T 0 is similar to the previously reported GaAsBi lasers (T 0 =90∼125 K), indicating T 0 may be independent of Bi composition. 33 For the previously mentioned QW lasers of optimized 12% Al in barrier layer T 0 is equal to 100 K above RT. 11 This indicates that the low T 0 for GaAsBi LDs was mainly due to the non-radiative recombination caused by Bi-related defects.…”

A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

“…During the past decade, most of the focus has been on developing near-infrared band gap GaAsBi based structures on GaAs substrates. This has resulted in the demonstration of electrically pumped quantum well (QW) lasers with bismuth compositions of up to 6% and maximum room temperature lasing wavelengths of 1142 nm [10,11,12]. The threshold current densities of these devices are relatively high compared to bismuth-free material which has been shown to be due to defect-related recombination [11,13].…”

“…This has resulted in the demonstration of electrically pumped quantum well (QW) lasers with bismuth compositions of up to 6% and maximum room temperature lasing wavelengths of 1142 nm [10,11,12]. The threshold current densities of these devices are relatively high compared to bismuth-free material which has been shown to be due to defect-related recombination [11,13]. The main limiting factors affecting the devices are non-radiative recombination via defects and inhomogeneity effects caused by low temperature growth and difficulties of bismuth incorporation [14].…”

Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

“…Moreover, GaSbBi alloys have not been explored much, in contrast to GaAsBi alloys, which have been extensively studied in recent years by several groups. [14][15][16][17][18][19][20][21][22][23][24] In the case of GaAsBi, it is observed that Bi tends to segregate toward the surface and to form droplets due to its large size in comparison with arsenic. Therefore, the growth of III-V-Bi materials is usually achieved using very-low growth temperatures and a near stoichiometric V/III ratio.…”