Progress on GaInAsSb And InAsSbP Photodetectors for MiD-Infrared Wavelengths

Shellenbarger, Z.A.; Mauk, Michael G.; Sims, Paul E.; Cox, J.A.; Lesko, Joseph D.; Bower, J.R.; South, J. D.; DiNetta, L.C.

doi:10.1557/proc-484-135

Cited by 6 publications

(4 citation statements)

References 10 publications

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“…The availability of ternary InGaSb virtual substrates has a promising potential for developing high performance detectors, without the influence of the binary substrates usually used for processing the ternary materials [3]. Many articles reported different device structures using materials such as InGaAsSb and AlGaAsSb [4][5][6][7][8][9][10] including APDs [11][12][13] and phototransistors [14]. Such devices usually involve much complicated structures with difficult material processing.…”

Section: Introductionmentioning

confidence: 99%

Performance limits of room-temperature InAsSb photodiodes

2010

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The theoretical performance of medium wavelength infrared (MWIR) InAsSb-based ternary alloy photodiodes is examined theoretically taking into account thermal generation governed by the Auger and radiative mechanisms. The contribution of spin-off band on carrier lifetime in p-type InAsSb ternary is re-examined due to new insight into composition dependence of spin-orbit-splitting band gap energy. The investigations are carried out for photodiodes operated at room temperature. The effects of doping profiles on the photodiode parameters (R 0 A product and detectivity) are considered. The theoretical predictions of photodiode parameters are compared with experimental data published in the literature.

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Section: Introductionmentioning

confidence: 99%

Performance limits of room-temperature InAsSb photodiodes

2010

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“…InGaAsSb is a promising semiconductor for developing high gains 2 µm detectors. Several articles discussed the properties of this material and its application in p-n photodiode and APD fabrication [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] . The APD design most widely employed uses separate absorption and multiplication (SAM) layers.…”

Section: Introductionmentioning

confidence: 99%

RECENT DEVELOPMENT OF SB-BASED PHOTOTRANSISTORS IN THE 0.9- TO 2.2-μM WAVELENGTH RANGE FOR APPLICATIONS TO LASER REMOTE SENSING

Abedin

Refaat

Sulima

et al. 2006

Int. J. Hi. Spe. Ele. Syst.

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We have investigated commercially available photodiodes and also recent developed Sb -based phototransistors in order to compare their performances for applications to laser remote sensing. A custom-designed phototransistor in the 0.9- to 2.2-μm wavelength range has been developed at AstroPower and characterized at NASA Langley's Detector Characterization Laboratory. The phototransistor's performance greatly exceeds the previously reported results at this wavelength range in the literature. The detector testing included spectral response, dark current and noise measurements. Spectral response measurements were carried out to determine the responsivity at 2-μm wavelength at different bias voltages with fixed temperature; and different temperatures with fixed bias voltage. Current versus voltage characteristics were also recorded at different temperatures. Results show high responsivity of 2650 AIW corresponding to an internal gain of three orders of magnitude, and high detectivity (D*) of 3.9×1011 cm.Hz 1/2/ W that is equivalent to a noise-equivalent-power of 4.6×10-14 W/Hz 1/2 (-4.0 V @ -20°C) with a light collecting area diameter of 200-μm. It appears that this recently developed 2-μm phototransistor's performances such as responsivity, detectivity, and gain are improved significantly as compared to the previously published APD and SAM APD using similar materials. These detectors are considered as phototransistors based-on their structures and performance characteristics and may have great potential for high sensitivity differential absorption lidar (DIAL) measurements of carbon dioxide and water vapor at 2.05-μm and 1.9-μm, respectively.

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“…InGaAsSb is a promising semiconductor for developing high gain 2 µm detectors. Several articles discussed the properties of this material and its application in APD fabrication using the separate absorption and multiplication (SAM) structure [8][9][10][11][12][13][14][15][16] . Electron and hole impact ionization coefficients were evaluated and multiplication factors of 10-20 and 50-100 were achieved at 296 and 78 K, respectively, by Andreev et al [8][9][10] .…”

Section: Introductionmentioning

confidence: 99%

“…Voronina et al studied the mobility of charge carriers in InGaAsSb and its dependence on both the doping concentration and the temperature 13 . Development of p-n, pin and SAM APD structures were discussed by Shellenbarger et al using the same material [14][15][16] . Spectral response profile dependence on frontal and backward illumination of the devices has been investigated by the same group.…”

Section: Introductionmentioning

confidence: 99%

Characterization and analysis of InGaAsSb detectors

et al. 2003

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Profiling of atmospheric CO 2 at 2 µm wavelength using the LIDAR technique, has recently gained interest. Although several detectors might be suitable for this application, an ideal device would have high gain, low noise and narrow spectral response peaking around the wavelength of interest. This increases the detector signal-to-noise ratio and minimizes the background signal, thereby increasing the device sensitivity and dynamic range. Detectors meeting the above idealized criteria are commercially unavailable for this particular wavelength. In this paper, the characterization and analysis of Sb-based detectors for 2 µm lidar applications are presented. The detectors were manufactured by AstroPower, Inc., with an InGaAsSb absorbing layer and AlGaAsSb passivating layer.The characterization experiments included spectral response, current versus voltage and noise measurements. The effect of the detectors bias voltage and temperature on its performance, have been investigated as well. The detectors peak responsivity is located at the 2 µm wavelength. Comparing three detector samples, an optimization of the spectral response around the 2 µm wavelength, through a narrower spectral period was observed. Increasing the detector bias voltage enhances the device gain at the narrow spectral range, while cooling the device reduces the cut-off wavelength and lowers its noise. Noise-equivalent-power analysis results in a value as low as 4x10 -12 W/Hz 1/2 corresponding to D* of 1x10 10 cmHz 1/2 /W, at -1 V and 20 o C. Discussions also include device operational physics and optimization guidelines, taking into account peculiarity of the Type II heterointerface and transport mechanisms under these conditions.

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Progress on GaInAsSb And InAsSbP Photodetectors for MiD-Infrared Wavelengths

Cited by 6 publications

References 10 publications

Performance limits of room-temperature InAsSb photodiodes

Performance limits of room-temperature InAsSb photodiodes

RECENT DEVELOPMENT OF SB-BASED PHOTOTRANSISTORS IN THE 0.9- TO 2.2-μM WAVELENGTH RANGE FOR APPLICATIONS TO LASER REMOTE SENSING

Characterization and analysis of InGaAsSb detectors

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