Progress of Large‐Scale Synthesis and Electronic Device Application of Two‐Dimensional Transition Metal Dichalcogenides

Song, Xiongfei; Guo, Zhongxun; Zhang, Qiaochu; Zhou, Peng; Bao, Wenzhong; Zhang, David Wei

doi:10.1002/smll.201700098

Cited by 58 publications

(42 citation statements)

References 231 publications

(332 reference statements)

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“…In contrast with amorphous SiO 2 /Si, mica as appropriate substrates have many merits in the epitaxial growth of 2D materials, such as periodic structure and a smooth and inert surface . Epitaxial growth is an effective approach to obtain high‐quality 2D materials, which can be achieved with a small structure mismatch between the nanoflakes and substrates or the weak vdW force at the interfaces.…”

Section: Synthesismentioning

confidence: 99%

2D Group IVB Transition Metal Dichalcogenides

Yan

Gong

Wangyang

et al. 2018

Adv Funct Materials

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Semiconductor technology is currently impaired by the surface dangling bond of materials, which introduces scattering and interface traps. 2D materials, especially transition metal dichalcogenides (TMDs) with different main groups, have settled this issue by utilizing unique atomically smooth surfaces and van der Waals (vdW) structures. Over the past few decades, many processes for exploring new materials, manipulating physical properties, and synthesizing single crystals have been developed. Among these 2D materials, group IVB TMDs are distinguished for their splendid physical properties, including ultrahigh mobility, charge density wave, superconducting transitions, etc. Here, the recent advances in group IVB TMDs are reviewed, which offer easy access to next generation nano-, opto-, thermal-electronic, energy storage and conversion applications. Both the advantages and challenges of these studies are summarized to further clarify existing problems.such as ZrSe 2 is up to 8000 µA µm −1 , which is 10 3 times higher than that of MoS 2 . [11] Group IVB TMDs are also promising thermoelectric materials for their enhanced thermoelectric performance with a high power factor such as TiS 2 . [12][13][14][15][16] These features indicate the great potential of group IVB TMDs for adoption into electronics. In addition, group IVB TMDs show fascinating electrochemical performances as hold materials [17][18][19] or electrodes [20,21] in catalysis [22,23] and batteries [24,25] (Figure 1). A breakthrough may be introduced in nanoelectronic and energy fields for ultrahigh performances and nontoxicity of 2D group IVB TMDs.In this review, we focus on the electronic structures of 1T-phase group IVB TMDs, the abundant properties of group IVB TMDs, and their applications in electronic devices. In particular, we start with the unique crystal structures and calculated electronic structures of 2D group IVB dichalcogenides. Then, the great properties and the current studies in electronic devices are reviewed with an emphasis on recently reported transistor and photodetectors based on group IVB TMD nanosheets. In the third part, the synthesis of group IVBs nanostructures is described. We review the current approaches for the isolation of ultrathin sheets and analyze the advantages and drawbacks of various preparation methods. At last, we present the challenges and future prospects of group IVB TMDs. Crystal and Electronic StructuresThe electronic structures of 2D TMDs strongly depend on their crystal structures and d-electron counts. Another crucial feature is the partially filled d bands of transition metals. Bulk TMDs are composed of ordered stacking monolayers connected by the weak van der Waals (vdW) interaction. This kind of layered material exists multifarious in polymorphs and commonly crystallize into three different structures in 1T, 2H, and 3R phases. For group IVB TMDs, 1T phase is more stable than 2H phase in reversal of group VIB TMDs due to their lower formation energies. [23] Figure 2a,b depicts the two typical structures o...

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Section: Synthesismentioning

confidence: 99%

2D Group IVB Transition Metal Dichalcogenides

Yan

Gong

Wangyang

et al. 2018

Adv Funct Materials

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“…Transition metal based materials can store much more energy than carbon materials thanks to the faradaic charge transfer process involved in the electrochemical process. [3,4] In the past decades, researches on transition metal oxides/hydroxides, [5][6][7][8][9][10][11][12][13][14][15] sulfides, [16][17][18][19][20][21][22][23][24] selenides, [25] phosphides, [26] and MXenes [27] based SC electrode materials have been reported extensively. The general properties of these materials and their electrochemical performance in SCs have already been well documented.…”

Section: Introductionmentioning

confidence: 99%

Boosting the cycling stability of transition metal compounds-based supercapacitors

Wang

Chen

et al. 2019

Energy Storage Materials

548

222

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Boosting the cycling stability of transition metal compoundsbased supercapacitors, Energy ABSTRACT As an important electrochemical energy storage system, supercapacitors (SCs) possess advantages of high power density, long cycling life and great safety to meet the requirements of particular applications. Current commercial SCs that are mainly based on activated carbon materials generally have low energy density. Development of alternative electrode materials with a high specific capacitance is critical to achieving a high energy density of SCs. In the past decades, transition metal compounds have been explored as promising electrode materials for SCs with high energy density by taking advantage of faradaic charge storage process of transition metal cations. Nevertheless, SCs with transition metal based electrode materials normally suffer sluggish electrochemical reaction kinetics and poor electron conductivity, which result in unsatisfactory cycling stability and rate capability. In this review, we focus on the analysis of recent research breakthroughs in the development of high electrochemical performance SCs using transition metal oxides/hydroxides, sulfides, selenides and phosphides. The majority of the devices demonstrated outstanding cycling lifetime of over 10,000 times and excellent capacity retention rate along with high energy density. A critical analysis of the factors that contribute to the electrochemical performance of these star-performing SCs such as material morphology, crystal structure, composition, interfacial properties and key chemical reactions are presented. This timely review sheds light on the most effective possible paths towards design and fabrication of high performance SCs using transition metal electrode materials.

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“…Vertical stacking of these 2D materials opens the possibility of assembling different layers arbitrarily without any deliberation over the precision of lattice matching unlike their bulk counterparts [3][4][5] . Recent developments in vapor phase growth techniques facilitate the direct synthesis methods of 2D/2D vertical heterojunctions [6][7][8] . These 2D…”

Section: Introductionmentioning

confidence: 99%

Gate-Tunable WSe₂/SnSe₂ Backward Diode with Ultrahigh-Reverse Rectification Ratio

Krishna

Dandu

Das

et al. 2018

ACS Appl. Mater. Interfaces

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Progress of Large‐Scale Synthesis and Electronic Device Application of Two‐Dimensional Transition Metal Dichalcogenides

Abstract: The recent exploration of semiconducting twodimensional (2D)

Cited by 58 publications

References 231 publications

2D Group IVB Transition Metal Dichalcogenides

2D Group IVB Transition Metal Dichalcogenides

Boosting the cycling stability of transition metal compounds-based supercapacitors

Gate-Tunable WSe₂/SnSe₂ Backward Diode with Ultrahigh-Reverse Rectification Ratio

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Progress of Large‐Scale Synthesis and Electronic Device Application of Two‐Dimensional Transition Metal Dichalcogenides

Abstract: The recent exploration of semiconducting twodimensional (2D)

Cited by 58 publications

References 231 publications

2D Group IVB Transition Metal Dichalcogenides

2D Group IVB Transition Metal Dichalcogenides

Boosting the cycling stability of transition metal compounds-based supercapacitors

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

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Gate-Tunable WSe₂/SnSe₂ Backward Diode with Ultrahigh-Reverse Rectification Ratio