2022
DOI: 10.1039/d2tc02127g
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Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Abstract: This review provides an overview of the basic concepts and operation mechanisms of ultraviolet (UV) photodetectors (PDs), the main research status, and future outlooks of II–VI group compound semiconductor-based UVPDs.

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Cited by 47 publications
(25 citation statements)
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“…Thus, a slightly slower response for the 58 nm thickness was attributed to the lowest W D and highest capacitance at which efficient photodetector performance parameters were achieved. Thus, there is a trade-off between the photodetector responsivity and response time that make it critical to choose the appropriate CuInSe 2 thickness …”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Thus, a slightly slower response for the 58 nm thickness was attributed to the lowest W D and highest capacitance at which efficient photodetector performance parameters were achieved. Thus, there is a trade-off between the photodetector responsivity and response time that make it critical to choose the appropriate CuInSe 2 thickness …”
Section: Resultsmentioning
confidence: 99%
“…Thus, there is a trade-off between the photodetector responsivity and response time that make it critical to choose the appropriate CuInSe 2 thickness. 54 ■…”
Section: ■ Methodsmentioning
confidence: 99%
“…Optoelectronic semiconductors that exhibit excellent electronic and optical properties have significant application potential in solar cells, 1,2 light-emitting diodes (LEDs), 3,4 laser diodes, 5 bioimaging, 6 and photodetectors. 7,8 Throughout, the crystal structures of optoelectronic semiconductors are mainly comprised of octahedral and tetrahedral structures. The typical representative octahedral structure is a perovskite in which Pb-based perovskites present superb optical properties, such as a high absorption conversion and narrow luminance spectra.…”
Section: Introductionmentioning
confidence: 99%
“…Such a high bias voltage effectively separates almost all electron−hole pairs, affording a weak photocurrent shift. 44,45 In addition, the MSC wavelength sensor has also exhibited excellent device stability under 1 V bias driving in Figure S10.…”
mentioning
confidence: 99%
“…However, when the bias voltage increases to 3 V, the photocurrent slightly increases. Such a high bias voltage effectively separates almost all electron–hole pairs, affording a weak photocurrent shift. , Figure f presents the I Ph,1 /I Ph,2 –wavelength relation at different voltages of 1, 2, and 3 V, where all bias voltage-related curves exhibit a very slightly downward shift with increasing bias voltage and exhibit similar monotonic functions. Notably, the I Ph,1 /I Ph,2 –wavelength curves almost overlap at 2 and 3 V bias voltage.…”
mentioning
confidence: 99%