Progress in silicon carbide semiconductor electronics technology

Neudeck, Philip G.

doi:10.1007/bf02659688

Cited by 245 publications

(93 citation statements)

References 18 publications

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“…Devices that contained no screw dislocations are denoted by open symbols, while filled symbols represent data collected from devices that contained at least one screw dislocation. The experimentally observed failure data points plotted in Figure 2 are consistent with the t "la behavior predicted by Relation (1). The fit to the expe "rtmental data: Po = 2800 [t (l.ts)] ''a kW/cm 2 {4H-SiC Experimental}…”

Section: Methodssupporting

confidence: 75%

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

et al. 1998

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It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors > 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per cm 2, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has been previously shown that diodes containing elementary screw dislocations exhibit a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and concentrated microplasmic breakdown current filaments when measured under DC testing conditions. This paper details the impact of elementary screw dislocations on the experimentally observed reverse-breakdown pulse-failure characteristics of low-voltage (< 250 V) small-area (< 5 × 10-4 cm2) 4H-SiC p+n diodes. The presence of elementary screw dislocations did not significantly affect the failure properties of these diodes when subjected to non-adiabatic breakdown-bias pulsewidths ranging from 0.1 μs to 20 μs in duration. Diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities well above the failure power densities exhibited by highly reliable silicon power rectifiers. This preliminary result, based on measurements from one wafer of SiC diodes, suggests that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations.

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Section: Methodssupporting

confidence: 75%

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

et al. 1998

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“…While small-current, small-area high-voltage (1-5 kV) SiC devices are being prototyped and tested, the high densities of crystallographic defects in SiC wafers prohibits the attainment of SiC devices with very high operating currents (> 50 A) that are commonly obtainable in silicon-based high-power electronics [1].…”

Section: Introductionmentioning

confidence: 99%

Breakdown Degradation Associated With Elementary Screw Dislocations In 4H-SiC P⁺N Junction Rectifiers

1997

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It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector > 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per cm 2 , nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p + n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p + n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

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“…[1][2][3][4] Ni, Ti, Cr, Co, Al, W, Mo, Pt, etc. have been widely studied in order to obtain good ohmic contact on different polytype SiC substrate.…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

et al. 2014

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A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10-5 Ω·cm2 was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni3Si to Ni2Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

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Progress in silicon carbide semiconductor electronics technology

Cited by 245 publications

References 18 publications

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

Breakdown Degradation Associated With Elementary Screw Dislocations In 4H-SiC P⁺N Junction Rectifiers

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

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Progress in silicon carbide semiconductor electronics technology

Cited by 245 publications

References 18 publications

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

Breakdown Degradation Associated With Elementary Screw Dislocations In 4H-SiC P+N Junction Rectifiers

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

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Breakdown Degradation Associated With Elementary Screw Dislocations In 4H-SiC P⁺N Junction Rectifiers