2021
DOI: 10.1007/s12274-021-3586-6 View full text |Buy / Rent full text
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Abstract: As the scaling down of Si devices in the range less than few nm has been expedited up to a physical limit of Si, low dimensional materials have been regarded as one of next generation semiconductors. Among a variety of applications, studies on photodetectors have been actively investigated with their novel optical properties as well as astonishing electrical properties. However, most of research has focused on single device-type photodetector (i.e., photo-diode or photo-transistor). Contrary to common photodet… Show more

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