Progress in light-to-frequency conversion circuits based on low dimensional semiconductors

Abstract

As the scaling down of Si devices in the range less than few nm has been expedited up to a physical limit of Si, low dimensional materials have been regarded as one of next generation semiconductors. Among a variety of applications, studies on photodetectors have been actively investigated with their novel optical properties as well as astonishing electrical properties. However, most of research has focused on single device-type photodetector (i.e., photo-diode or photo-transistor). Contrary to common photodet…