Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

McLaughlin, Dirk V. P.; Pearce, Joshua M.

doi:10.1007/s11661-013-1622-1

Cited by 92 publications

(46 citation statements)

References 104 publications

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“…Indium-rich InGaN alloys are now being considered potential candidates for longer wavelength emitters, thermionic emitters, multi-junction solar cells, etc. [65][66][67]. A concern with polar heterostructures is the intrinsic and strong polarization fields resident in the lattice.…”

Section: Nonpolar Ingan/gan Heterostructuresmentioning

confidence: 99%

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

Roul¹,

Chandan²,

Mukundan³

et al. 2018

Epitaxy

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III-Nitride-based heterostructures are well suited for the fabrication of various optoelectronic devices such as light-emitting diodes (LEDs), laser diodes (LDs), high-power/-high-frequency field-effect transistors (FETs), and tandem solar cells because of their inherent properties. However, the heterostructures grown along polar direction are affected by the presence of internal electric field induced by the existence of intrinsic spontaneous and piezoelectric polarizations. The internal electric field is deleterious for optoelectronic devices as it causes a spatial separation of electron and hole wave functions in the quantum wells, which thereby decreases the emission efficiency. The growth of III-nitride heterostructures in nonpolar or semipolar directions is an alternative option to minimize the piezoelectric polarization. The heterostructures grown on these orientations are receiving a lot of focus due to their potential improvement on the efficiency of optoelectronic devices. In the present chapter, the growth of polar and nonpolar III-nitride heterostructures using molecular beam epitaxy (MBE) system and their characterizations are discussed. The transport properties of the III-nitride heterostructure-based Schottky junctions are also included. In addition, their applications toward UV and IR detectors are discussed.

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Section: Nonpolar Ingan/gan Heterostructuresmentioning

confidence: 99%

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

Roul¹,

Chandan²,

Mukundan³

et al. 2018

Epitaxy

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“…However, besides being fundamental for the blue LEDs, InGaN is a very interesting material for solar photovoltaic devices too [41][42][43]. For this reason, InGaN and InGaN MQWs are also attracting several researches on this subject, and, probably, we will see further increased efficiencies of LEDs accompanied by the same achievements for solar cells.…”

Section: Some Current Researches On Ledsmentioning

confidence: 99%

Light-Emitting Diodes in the Solid-State Lighting Systems

Sparavigna¹

2014

ijSciences

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Red and green light-emitting diodes (LEDs) had been produced for several decades before blue emitting diodes, suitable for lighting applications, were widely available. Today, we have the possibility of combining the three fundamental colours to have a bright white light. And therefore, a new form of lightning, the solid-state lighting, has now become a reality. Here we discuss LEDs and some of their applications in displays and lamps.

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“…Thanks to their band gap spanning almost the whole solar spectrum from 0.7 eV (InN) to 3.4 eV (GaN), InGaN alloys are considered as promising candidates for high-efficiency photovoltaic devices [1,2]. This makes the development of all-InGaN multijunction solar cells with an overall efficiency larger than 50% theoretically possible.…”

Section: Introductionmentioning

confidence: 99%

Investigation of new approaches for InGaN growth with high indium content for CPV application

Arif

Streque

Gmili

et al. 2015

AIP Conference Proceedings

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Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

Cited by 92 publications

References 104 publications

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

Light-Emitting Diodes in the Solid-State Lighting Systems

Investigation of new approaches for InGaN growth with high indium content for CPV application

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