Investigation of new approaches for InGaN growth with high indium content for CPV application

Role of V-pits in the performance improvement of InGaN solar cells

“…1 Nevertheless, there are two major challenges 2,3 that could limit the realization of high efficiency InGaN solar cells. New approaches 4 have been proposed to overcome the first of these challenges, which deals with the growth of a high structural quality thick InGaN absorber layer with high indium (In) concentration. Two methods to prevent phase separation and high dislocation density in the absorber are the substitution of the bulk absorber by either a semibulk absorber 5,6 or InGaN nano-structures.…”