Programmable Logic Based on Large Magnetoresistance of Germanium

Chen, Jiaojiao; Piao, Hong‐Guang; Luo, Zhaochu; Xiong, Chengyue; Zhang, Xiaozhong

doi:10.1088/0256-307x/33/4/047501

Cited by 3 publications

(3 citation statements)

References 15 publications

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“…In addition, germanium is a conventional semiconductor material, which has been extensively used in high technology applications. [47] Therefore, this unique MR property will be applicable to fabricate Ge-based magnetic sensing or magnetic logic [48,49] operating in ultra-high-magnetic-field environments.…”

Section: Resultsmentioning

confidence: 99%

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

He 何,

Yang 杨,

Niu 牛

et al. 2024

Chinese Phys. B

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Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance (MR) effect in a low static magnetic field environment at room temperature. However, how to obtain a large room-temperature negative MR effect in them remains to be studied. In this paper, by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side, we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment, but not in a static low magnetic field environment. Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory, we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field. This theoretical analytical model is further confirmed by regulating the geometry size of the device. Our work sheds light on the development of novel magnetic sensing, magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

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Section: Resultsmentioning

confidence: 99%

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

He 何,

Yang 杨,

Niu 牛

et al. 2024

Chinese Phys. B

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“…The magnetoresistance (MR) effect attracts lots of attention because of its great research significance and potential applications in magnetic sensors, [1,2] hard drives, [3] magnetic memory, [4] etc. Comparing with the magnetic materials, the MR effects on the non-magnetic materials, such as Si, [5][6][7][8][9][10][11][12][13][14][15][16] Ge, [17][18][19][20] NbSb 2 , [21] WTe 2 , [22] InAs, [23] CdTe, [24] Hg 0.77 Cd 0.23 Te, [25] GaAs, [26][27][28][29][30] etc., each present a comparable large MR ratio. Among them, MR devices based on GaAs, which is one of the direct band gap non-magnetic semiconductors, have also attracted a great deal of attention.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device

He¹,

Sun²

2018

Chinese Phys. B

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It is still a great challenge for semiconductor based-devices to obtain a large magnetoresistance (MR) effect under a low magnetic field at room temperature. In this paper, the photoinduced MR effects under different intensities of illumination at room temperature are investigated in a semi-insulating gallium arsenide (SI-GaAs)-based Ag/SI-GaAs/Ag device. The device is subjected to the irradiation of light which is supplied by light-emitting diode (LED) lamp beads with a wavelength in a range of about 395 nm-405 nm and the working power of each LED lamp bead is about 33 mW. The photoinduced MR shows no saturation under magnetic fields (B) up to 1 T and the MR sensitivity S (S = MR/B) at low magnetic field (B = 0.001 T) can reach 15 T −1 . It is found that the recombination of photoinduced electron and hole results in a positive photoinduced MR effect. This work implies that a high photoinduced S under a low magnetic field may be obtained in a non-magnetic semiconductor device with a very low intrinsic carrier concentration.

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“…Fig.1. The scheme of the location of current (1, 2), Hall(3,4) contacts and the contacts for measurement of magnetoresistance components(5,6) of the anisotropic sample placed into the magnetic field by dielectric displacement 𝐵.…”

mentioning

confidence: 99%

Modelling Magnetoresistance Effect in Limited Anisotropic Semiconductors

Филиппов¹,

Mitsuk²

2017

Chinese Phys. Lett.

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A macroscopic model of the magnetoresistance effect in limited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and films. Based on a unified mathematical model the method is worked out enabling us to measure tensor components of the specific electrical resistance and the relative magnetoresistance of anisotropic semiconductors simultaneously.

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Programmable Logic Based on Large Magnetoresistance of Germanium

Cited by 3 publications

References 15 publications

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device

Modelling Magnetoresistance Effect in Limited Anisotropic Semiconductors

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