Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device

He, Xuhui; Sun, Zhigang

doi:10.1088/1674-1056/27/6/067204

Cited by 3 publications

(3 citation statements)

References 45 publications

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“…Thus, the Hall effect is involved in the R-B measurement results, leading to the asymmetry of the R-B curves. To eliminate the influence of hall effects on resistance, we applied the formula R even = (R(B) + R(−B))/2, where R(B) and R(−B) are the measured resistance under positive and negative magnetic fields, respectively, to obtain the final resistance of the device [10,13]. And then the calculated MR-B curves at 10 K (see figure 5(d)) were obtained by using the R even values.…”

Section: Resultsmentioning

confidence: 99%

“…It has promoted the development of information storage, magnetic sensing and other fields. Comparing with the magnetic materials, the MR effect on the non-magnetic semiconductor materials such as Si [3,[9][10][11][12][13][14][15], GaAs [13,16,17] and Ge [18][19][20][21][22] shows a comparably large MR value. However, due to the variety of non-magnetic semiconductor materials and the difference in the structures of the devices, the physical mechanisms of MR effects are various, such as the space charge effect model [3,11,14,18,[23][24][25][26], the diode-assisted geometric enhancement model [16,19,27], the photo inducedassisted enhancement model [13], the carrier recombination model [28][29][30], and avalanche breakdown model [12,15,17,[31][32][33], and so forth.…”

Section: Introductionmentioning

confidence: 99%

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Negative differential resistance and unsaturated magnetoresistance effects based on avalanche breakdown

Yang

Zhu

et al. 2020

J. Phys.: Condens. Matter

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The negative differential resistance (NDR) effect and magnetoresistance (MR) effect attract a lot of attention since they have been widely applied in fields such as circuit amplifiers and information storage, respectively. In general, the NDR and MR effects derive from different physical mechanisms, which makes it difficult to obtain both an NDR effect and a large unsaturated MR effect in a device based on the same physical mechanism. In this paper, the NDR and unsaturated MR effects were observed simultaneously in In/SiO 2 /p-Si/SiO 2 /In hetero junction devices, and their physical mechanisms were investigated. It is found that under zero magnetic field conditions, the NDR effect can be observed up to 25 K which is much higher than the temperature of NDR obtaining in intrinsic silicon. The NDR effect is significantly enhanced by applying a small magnetic field of 0.1 T. Meanwhile, the unsaturated positive MR effect is obtained when an external magnetic field is applied. Our analysis shows that the NDR effect and the unsaturated MR effect can be explained on the basis of the same physical mechanism of the avalanche breakdown in the In/SiO 2 /p-Si hetero junction. The NDR effect mainly results from complex effects containing the carrier injection after avalanche breakdown in the hetero junction, the reduction of the Schottky barrier height and the Joule heating effect. The large unsaturated MR effect derives from the suppression of the plasma due to avalanche breakdown by the applied magnetic field. The largest value of MR based on avalanche breakdown can reach about 530%@1 T at 10 K, and MR sensitivity can be as high as about 29.4 T −1 under 0.05 T.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Negative differential resistance and unsaturated magnetoresistance effects based on avalanche breakdown

Yang

Zhu

et al. 2020

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

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“…[1][2][3][4] Meanwhile, the devices based on the MR effect in magnetic materials have been widely applied and have yielded substantial economic benefits. [5] For non-magnetic semiconductor materials and their devices, huge positive MR effect and abundant physical phenomena have been observed under low static magnetic fields by constructing devices with different geometric configurations, [6][7][8][9] designing different heterojunction structures, [10][11][12][13][14][15] choosing substrate materials with different doping concentrations, [16] introducing a photoinduced environment, [17] regulating external electric fields, [18][19][20][21] and so on. Therefore, non-magnetic semiconductors and their devices are very important application prospects.…”

Section: Introductionmentioning

confidence: 99%

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

He 何,

Yang 杨,

Niu 牛

et al. 2024

Chinese Phys. B

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Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance (MR) effect in a low static magnetic field environment at room temperature. However, how to obtain a large room-temperature negative MR effect in them remains to be studied. In this paper, by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side, we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment, but not in a static low magnetic field environment. Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory, we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field. This theoretical analytical model is further confirmed by regulating the geometry size of the device. Our work sheds light on the development of novel magnetic sensing, magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

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Separating interface magnetoresistance from bulk magnetoresistance in silicon-based Schottky heterojunctions device

et al. 2019

Journal of Applied Physics

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Nonmagnetic semiconductor based magnetoresistance (MR) devices combining high performance and low cost have attracted a lot of attention. However, it has been a great challenge to separate the interface MR from the bulk MR in the devices composed of Schottky heterojunctions. In this paper, the MR effect of a silicon-based Schottky heterojunction device had been studied, and its mechanisms were investigated by separating the interface MR effects from the bulk MR effects through combining two-probe and four-probe methods. We find that the bulk MR value is significantly smaller than the total MR value in the avalanche breakdown region in the temperature range of 150 K to 300 K, indicating that the total MR effect mainly originates from the interface MR effect. Theoretical analysis shows that the bulk MR effect is a normal one due to the existence of the Lorentz force on the carriers, and the interface MR effect relates to the suppression of the local plasmas by applying magnetic fields, where the local plasmas form due to the avalanche breakdown in the Ag/SiO2/p-Si Schottky heterojunctions. The total MR effect at room temperature can be further enhanced by reducing the distance between electrodes, and the total MR reaches about 1847% under a magnetic field of 1 T and the MR sensitivity is as large as 118.5 T−1 under 0.1 T.

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Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device

Cited by 3 publications

References 45 publications

Negative differential resistance and unsaturated magnetoresistance effects based on avalanche breakdown

Negative differential resistance and unsaturated magnetoresistance effects based on avalanche breakdown

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Separating interface magnetoresistance from bulk magnetoresistance in silicon-based Schottky heterojunctions device

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