Profiles and defects in highly channeled and random beam orientation MeV dopant implants in Si(100)

Current, Michael; Kawasaki, Yoji; Sakaguchi, Takuya; Pongrácz, Anita; Samu, Viktor

doi:10.1557/s43580-022-00481-2

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Profiles and defects in highly channeled and random beam orientation MeV dopant implants in Si(100)

Cited by 2 publications

References 5 publications

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Effects of Ion Channeling and Co-implants on Ion Ranges and Damage in Si: Studies with PL, SRP, SIMS and MC models

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