Profile simulation of SU-8 thick film resist

Abstract

XP SU-8 3000 (hereinafter referred to as "SU-8") thick-film resist is a chemically amplified negative resist based on epoxy resin. Here, we report on the profile simulation for this resist. Profile simulation is an important technique for planning experiments. Thus, there have been many reports on simulation techniques. In particular, many studies have been conducted on chemically amplified positive resists, as they are major resist materials used in the IC industry. However, there have been few simulation studies concerning chemically amplified negative resists.Under these circumstances, we have considered performing simulations on chemically amplified negative resist. The results of the simulation and the SEM observations are in good agreement. This study demonstrates that simulation is possible for a chemically amplified negative resist (SU-8).

Simulation and analysis for microstructure profile of optical lithography based on SU-8 thick resist

“…Here SU-8-2050 resist is used, in which the thickness of microstructure is about 50 lm. The process parameters are shown in Table 1, and the other related parameters presented in literature [10] are adopted. With process parameters listed above, the experimental results are obtained, whose surface profiles are taken by scan electronic microscope (SEM), as shown in Fig.…”

“…This model should be slightly modified, while used in simulation for negative resists [9]. For SU-8 resist, the photoreaction initiator decomposes and generates an acid during exposure, and then the cross-linking reaction occurs during PEB, in which normalized concentration ratio after cross-link reaction is tightly related to speed of development [10].…”

Simulation of 3D inclined/rotated UV lithography and its application to microneedles

“…The exposure is performed by 365-nm UV light in air ambient. The other simulation parameters for SU-8 resist [12] are listed in Table 1. Two kinds of microstructures are simulated in the following sections: inclined resist pillars based on the inclined exposure technique, and truncated cone shaped profiles based on the inclined and rotated exposure technique.…”

Large scale three-dimensional simulations for thick SU-8 lithography process based on a full hash fast marching method

“…Three-dimensional (3D) simulations are useful to optimize the lithography process and the design of some MEMS elements, however, some problems are expected to be solved for the efficient application of 3D lithography simulations, especially for large scale 3D simulations. For example, most current researches in UV lithography of thick photoresists are case to case study but not system modeling of the whole lithography process [8][9][10][11][12][13][14][15], focusing on various aspects such aerial image models and etching surface advancement algorithms for inclined and vertical UV lithography of thick photoresists. Furthermore, the accurate aerial image simulation to obtain the light intensity distribution into the resists is a time-consuming step, limiting the implementation of large scale 3D simulation.…”