Production of large-area 2D materials for high-performance photodetectors by pulsed-laser deposition

Yao, Jiandong; Zheng, Zebo; Yang, Guowei

doi:10.1016/j.pmatsci.2019.100573

Cited by 178 publications

(150 citation statements)

References 612 publications

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“…2D layered materials, with their ever‐increasing assortment, have attracted significant interest toward high performance and novel optoelectronic devices, including those for flexible and/or transparent technologies . The presence of a finite bandgap in these 2D semiconductors (except monolayer graphene) makes them promising for visible and infrared (IR) photodetectors with excellent spectral response and gain while the flexibility of transferring them on any substrate without being plagued by lattice mismatches provides an excellent platform for heterogeneous and extreme bandgap engineering.…”

Section: Introductionmentioning

confidence: 99%

“…2D layered materials, with their ever-increasing assortment, have attracted significant interest toward high performance and novel optoelectronic devices, including those for flexible and/or transparent technologies. [1,2] The presence of a finite bandgap in these 2D semiconductors (except monolayer graphene) makes them promising for visible and infrared (IR) photodetectors with excellent spectral response and gain while the flexibility of transferring them on any substrate without being plagued by lattice mismatches provides an excellent platform for heterogeneous and extreme bandgap engineering. Graphene, transition metal dichalcogenides (TMDs), and black phosphorous and their heterostructures exhibit intriguing material behaviors, which are strongly dependent on the number of layers (or thickness) and have attracted the attention of the device community toward multifunctional optical devices.…”

Section: Introductionmentioning

confidence: 99%

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High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

Mech

Mohta

Chatterjee

et al. 2020

Physica Status Solidi (a)

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Herein, device demonstration based on vertical transport in multilayer α‐In2Se3 is reported. Photodetectors realized using a metal/α‐In2Se3/indium tin oxide (ITO) vertical junction exhibit clear signature of the band edge in spectral responsivity. The wavelength at 680 nm corresponding to an ultrahigh responsivity of 1000 A W−1 and a detectivity of >1013 cm Hz0.5 W−1 at a bias of 0.5 V. The variation of responsivity and detectivity with optical power density is studied, and a transient response of 20 ms is obtained for the devices (instrument limitation). In addition, an asymmetric barrier height arising out of ITO and Au contacts to a vertical α‐In2Se3 junction resulted in a photovoltaic effect with VOC ≈0.1 V and ISC ≈0.4 μA under an illumination of 520 nm.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

Mech

Mohta

Chatterjee

et al. 2020

Physica Status Solidi (a)

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“…Besides, thickness of the films can be readily tuned by changing the laser pulse number. [44][45][46] In light of this, PLD method is adopted in this work to deposite FL-MoTe 2 film with high uniformity and high crystal. Figure 1a illustrates the deposition process.…”

Section: Resultsmentioning

confidence: 99%

Ultrahigh Speed and Broadband Few‐Layer MoTe₂/Si 2D–3D Heterojunction‐Based Photodiodes Fabricated by Pulsed Laser Deposition

et al. 2020

Adv Funct Materials

139

115

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2D transition metal dichalcogenides are promising candidates for high‐performance photodetectors. However, the relatively low response speed as well as the complex transfer process hinders their wide applications. Herein, for the first time, the fabrication of a few‐layer MoTe2/Si 2D–3D vertical heterojunction for high‐speed and broadband photodiodes by a pulsed laser deposition technique is reported. Owing to the high junction quality, ultrathin MoTe2 film thickness, and unique vertical n–n heterojunction structure, the photodiode exhibits excellent device performance in terms of a high responsivity of 0.19 A W−1 and a large detectivity of 6.8 × 1013 Jones. The device is also capable of detecting a broadband light with wavelength spanning from 300 to 1800 nm. More importantly, the device possesses an ultrahigh response speed up to 150 ns with a 3‐dB electrical bandwidth approaching 0.12 GHz. This work paves the way toward the fabrication of novel 2D–3D heterojunctions for high‐performance, ultrafast photodetectors.

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“…Electrochemical exfoliation is generally used to obtain, applying a suitable voltage, graphene from graphite. Ionic species are driven to intercalate into graphite forming gaseous species that expand and exfoliate individual graphene sheets [ 48 ].…”

Section: Synthesis Methods Of Mo-based 2d Layered Materialsmentioning

confidence: 99%

Mo-Based Layered Nanostructures for the Electrochemical Sensing of Biomolecules

Zribi

Neri

2020

Sensors

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Mo-based layered nanostructures are two-dimensional (2D) nanomaterials with outstanding characteristics and very promising electrochemical properties. These materials comprise nanosheets of molybdenum (Mo) oxides (MoO2 and MoO3), dichalcogenides (MoS2, MoSe2, MoTe2), and carbides (MoC2), which find application in electrochemical devices for energy storage and generation. In this feature paper, we present the most relevant characteristics of such Mo-based layered compounds and their use as electrode materials in electrochemical sensors. In particular, the aspects related to synthesis methods, structural and electronic characteristics, and the relevant electrochemical properties, together with applications in the specific field of electrochemical biomolecule sensing, are reviewed. The main features, along with the current status, trends, and potentialities for biomedical sensing applications, are described, highlighting the peculiar properties of Mo-based 2D-nanomaterials in this field.

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Production of large-area 2D materials for high-performance photodetectors by pulsed-laser deposition

Cited by 178 publications

References 612 publications

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

Ultrahigh Speed and Broadband Few‐Layer MoTe₂/Si 2D–3D Heterojunction‐Based Photodiodes Fabricated by Pulsed Laser Deposition

Mo-Based Layered Nanostructures for the Electrochemical Sensing of Biomolecules

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Production of large-area 2D materials for high-performance photodetectors by pulsed-laser deposition

Cited by 178 publications

References 612 publications

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In2Se3

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In2Se3

Ultrahigh Speed and Broadband Few‐Layer MoTe2/Si 2D–3D Heterojunction‐Based Photodiodes Fabricated by Pulsed Laser Deposition

Mo-Based Layered Nanostructures for the Electrochemical Sensing of Biomolecules

Contact Info

Product

Resources

About

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

Ultrahigh Speed and Broadband Few‐Layer MoTe₂/Si 2D–3D Heterojunction‐Based Photodiodes Fabricated by Pulsed Laser Deposition