Production of high-speed oxide-confined VCSEL arrays for datacom applications

Bossert, David; Collins, Doug; Aeby, Ian; Clevenger, Jascinda; Helms, Christopher J.; Luo, Wenbin; Wang, Charlie X.; Hou, H.Q.

doi:10.1117/12.469228

Cited by 16 publications

(12 citation statements)

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“…The answer is that the differences in reliability between vendors is less than the difference from batch-to-batch from most suppliers. We will not use the space in this article to publish reliability test results, since our results have been similar to those available in reliability reports published elsewhere [4,5].…”

Section: Vcsel Reliability: the Present State Of The Artsupporting

confidence: 82%

“…The preliminary information which was available as little as six months ago indicated that 10Gb/s operation could only be done reliably to 50°C, something that was likely to require much more sophisticated cooling systems than had previously been used (e.g., heat pipes directly contacting the transceiver case. More recent information looks encouraging that these devices can be operated to 70°C [5], but this is still a very challenging application. Given limitations on further speed increases imposed by carrier transport and device physics, it seems likely at this time that 20Gb/s or 40Gb/s operation will involve a CW laser with an external modulator, rather than continued use of direct modulation.…”

Section: Challenges For the Futurementioning

confidence: 95%

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Oxide VCSEL reliability qualification at Agilent Technologies

Herrick

2002

SPIE Proceedings

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In the past two years, Agilent Technologies has had a unique opportunity to study the reliability of VCSELs from most major manufacturers. We report on our methodology for qualifying prospective VCSEL suppliers, and briefly discuss our findings. The expected use environment for VCSELs is covered, along with VCSEL reliability limitations with existing technology. Differences between maverick and wearout failures are discussed, and examples of each are shown; VCSEL failure analysis is also briefly touched on. Finally, recent challenges in using oxide VCSELs in non-hermetic packaging, and 10 Gb/s operation, are briefly covered.

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Section: Vcsel Reliability: the Present State Of The Artsupporting

confidence: 82%

Section: Challenges For the Futurementioning

confidence: 95%

Oxide VCSEL reliability qualification at Agilent Technologies

Herrick

2002

SPIE Proceedings

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“…VCSELs are typically driven with current-mode drivers, since the current directly controls the emitted light. Currently, commercial VCSELs are available that work at 10Gb/s data rates with simple non-return-to-zero (NRZ) modulation [3]. Device performance is limited by a combination of electrical device parasitics and the optical bandwidth's square-root dependence on average current.…”

Section: Introductionmentioning

confidence: 99%

High-Speed Transmitters in 90nm CMOS for High-Density Optical Interconnects

Palermo¹,

Horowitz²

2006

2006 Proceedings of the 32nd European Solid-State Circuits Conference

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Abstract-Small, high-speed and low power optical transmitter circuits are needed for optical interconnects to play a role in improving chip I/O bandwidth. This paper demonstrates two different transmitter designs fabricated in a 1V 90nm CMOS technology, one suitable for driving vertical cavity surface emitting lasers (VCSELs) and the other for driving multiple quantum well modulators (MQWMs). A four-tap current summing FIR equalizer extends VCSEL data rate for a given average current. It consumes 80mW at 18Gb/s operation and occupies 0.03mm 2 area. The MQWM transmitter has a pulsedcascode output stage capable of supplying a voltage swing of twice the 1V supply without overstressing thin-oxide core devices. It consumes 38mW at 16Gb/s and occupies 0.014mm 2 area.

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“…Derived from these rate equations, the VCSEL relaxation oscillation frequency , which is proportional to the effective bandwidth, is directly proportional to the square root of the injected current above the threshold current (1) Combining an electrical parasitic model with the optical rateequation model yields the total frequency response of a 10 Gb/s class VCSEL, shown in Fig. 3 [22].…”

Section: Vcsel Transmittermentioning

confidence: 99%

“…The laser diode's dominant electrical time constant comes from the bias-dependent junction RC, with the dominant junction capacitor value typically between 0.5-1 pF for 10 Gb/s class 850 nm VCSELs [21], [22]. In addition to the bias-dependent junction resistance, there is also significant series resistance due to the large number of distributed Bragg reflector (DBR) mirrors used for high reflectivity, with a total device series resistance typically between 50 to 150 .…”

Section: Vcsel Transmittermentioning

confidence: 99%

A 90nm CMOS 16Gb/s Transceiver for Optical Interconnects

Palermo

Emami

Horowitz

2007

2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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Abstract-Interconnect architectures which leverage high-bandwidth optical channels offer a promising solution to address the increasing chip-to-chip I/O bandwidth demands. This paper describes a dense, high-speed, and low-power CMOS optical interconnect transceiver architecture. Vertical-cavity surface-emitting laser (VCSEL) data rate is extended for a given average current and corresponding reliability level with a four-tap current summing FIR transmitter. A low-voltage integrating and double-sampling optical receiver front-end provides adequate sensitivity in a power efficient manner by avoiding linear high-gain elements common in conventional transimpedance-amplifier (TIA) receivers. Clock recovery is performed with a dual-loop architecture which employs baud-rate phase detection and feedback interpolation to achieve reduced power consumption, while high-precision phase spacing is ensured at both the transmitter and receiver through adjustable delay clock buffers. A prototype chip fabricated in 1 V 90 nm CMOS achieves 16 Gb/s operation while consuming 129 mW and occupying 0.105 mm 2 .Index Terms-Clock and data recovery, equalization, laser driver, optical interconnects, optical receiver, serial transceiver, VCSEL.

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Production of high-speed oxide-confined VCSEL arrays for datacom applications

Cited by 16 publications

References 0 publications

Oxide VCSEL reliability qualification at Agilent Technologies

Oxide VCSEL reliability qualification at Agilent Technologies

High-Speed Transmitters in 90nm CMOS for High-Density Optical Interconnects

A 90nm CMOS 16Gb/s Transceiver for Optical Interconnects

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