Production and characterization of layer by layer sputtered single-phase AgInSe2 thin film by thermal selenization

Kaleli, Murat; Çolakoğlu, T.; Parlak, M.

doi:10.1016/j.apsusc.2013.09.043

Cited by 12 publications

(6 citation statements)

References 30 publications

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“…Different values have been reported in the literature for the bandgap of AgInSe 2 ranging between 1.02 to 1.35 eV depending on the growth method and processing conditions. 20,24,25,27,28,30,42–47 However, the photoluminescence for our film is centered at 1.25 eV with a narrow FWHM of 59 meV, shown in Fig. 3d.…”

Section: Resultsmentioning

confidence: 77%

“…In most cases, AgInSe 2 films have been prepared using costly vacuum processing techniques. 20,[23][24][25][26][27][28][29][30] These techniques require a high vacuum, have inefficient material utilization, and involve batch processing. 31,32 Solution processing is a costeffective alternative for rapidly commercializing promising materials such as AgInSe 2 .…”

Section: Introductionmentioning

confidence: 99%

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Enhancing the optoelectronic properties of solution-processed AgInSe₂ thin films for application in photovoltaics

Agarwal,

Weideman,

Rokke

et al. 2024

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Enhancing the optoelectronic properties of solution-processed AgInSe₂ thin films for application in photovoltaics

Agarwal,

Weideman,

Rokke

et al. 2024

J. Mater. Chem. C

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“…Mean relative errors [(calc – exp)/exp] in cell parameters compared to averaged experimental data depending on the density functional. Experimental data for ZnO, − ZnS, ,− CdS, ,,− CuInS 2 , − CuInSe 2 , − CuGaSe 2 , − CuAlSe 2 , − AgInSe 2 , − CuGaS 2 , − AgAlSe 2 , AgGaSe 2 , − CdIn 2 S 4 , − CZTSe, − diamond, ,− and quartz. − …”

Section: Resultsmentioning

confidence: 99%

“…Black dots mark the average in the experimental literature, and error bars are plotted between the minimum and maximum reported gap values. Experimental data for ZnO, − ZnS, ,− CdS, ,,− CuInS 2 , − CuInSe 2 , − CuGaSe 2 , − CuAlSe 2 , − AgInSe 2 , − CuGaS 2 , − AgAlSe 2 , AgGaSe 2 , − CdIn 2 S 4 , − CZTSe, − diamond, ,− and quartz. − .…”

Section: Resultsmentioning

confidence: 99%

“…Simulated vs experimental energy gaps for hybrid functionals (HSE06, PBE0, and B3LYP) and many-body methods [(calc – exp)/exp]. Experimental data for ZnO, − ZnS, ,− CdS, ,,− CuInS 2 , − CuInSe 2 , − CuGaSe 2 , − CuAlSe 2 , − AgInSe 2 , − CuGaS 2 , − AgAlSe 2 , AgGaSe 2 , − CdIn 2 S 4 , − CZTSe, − diamond, ,− and quartz. − The gray and black dotted lines correspond to 5 and 10% relative errors, respectively.…”

Section: Discussionmentioning

confidence: 99%

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Accurate Ab Initio Calculations on Various PV-Based Materials: Which Functional to Be Used?

Stoliaroff

Latouche

2020

J. Phys. Chem. C

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Herein we report a thorough ab initio investigation targeting the optical and electronic properties of 14 binary, ternary, and quaternary compounds (CuInSe2, CuGaSe2, ZnO, ZnS, CuAlSe2, CuInS2, AgInSe2, CuGaS2, AgAlSe2, AgGaSe2, CdIn2S4, Cu2SnZnSe4 (CZTSe), CdS, and α-SiO2 (quartz)) and 1 elemental solid: C (diamond). To perform the present benchmark, different classes of functionals have been chosen in order to sample modern computational methods (e.g., GGA, global hybrids PBE0 and B3LYP, screened hybrid functional HSE, and many-body methods). Our results demonstrate that the PBE-GGA functional reproduces the structure well but is unable to predict optoelectronic properties. However, B3LYP is the worst performing functional for reproducing the structure but, astonishingly, provides accurate band gaps. PBE0 and HSE usually overestimate and underestimate band gaps, respectively. Single-shot many-body calculations (G0W0) were tested on top of the PBE structure and density for several compounds.

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Reaction Tailoring for Synthesis of Phase‐Pure Nanocrystals of AgInSe₂, Cu₃SbSe₃ and CuSbSe₂

Kshirsagar

Khanna

2018

ChemistrySelect

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Present article highlights synthesis of phase pure I, III, VI2 and I, V, VI2 ternary selenides nanocrystals (NCs) using oleic acid and oleyl amine capping agents. The synthesis of AgInSe2 (AISe), Cu3SbSe3 and CuSbSe2 (CSSe) NCs was executed by employing cyclohexeno‐1,2,3‐selenadiazole (SDZ) as Se precursor. The current study is the first report describing use of thermally labile organoselenium compound for the synthesis of such technologically important ternary selenide NCs. Systematic study of the formation of AISe and CSSe NCs at different reaction time is carried out in order to confirm phase purity and stoichiometry. The spherical, stoichiometric and NIR active semiconductors showed formation of orthorhombic crystal structure as confirmed from XRD analysis. It was observed that formation of phase pure AISe NCs requires 5 hours (h) of constant heating at about 220οC irrespective of the capping agents however, CuSbSe2 was obtained within an hour in presence of oleyl amine at same reaction temperature. Nanocrystals were characterized by different analytical tools such as UV‐Visible spectroscopy, FTIR, XRD, SEM/EDS, TEM, particle size and XPS analysis. Based on the results, possible chemical reaction pathway for ternary chalcogenide is presented.

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Production and characterization of layer by layer sputtered single-phase AgInSe2 thin film by thermal selenization

Cited by 12 publications

References 30 publications

Enhancing the optoelectronic properties of solution-processed AgInSe₂ thin films for application in photovoltaics

Enhancing the optoelectronic properties of solution-processed AgInSe₂ thin films for application in photovoltaics

Accurate Ab Initio Calculations on Various PV-Based Materials: Which Functional to Be Used?

Reaction Tailoring for Synthesis of Phase‐Pure Nanocrystals of AgInSe₂, Cu₃SbSe₃ and CuSbSe₂

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Production and characterization of layer by layer sputtered single-phase AgInSe2 thin film by thermal selenization

Cited by 12 publications

References 30 publications

Enhancing the optoelectronic properties of solution-processed AgInSe2 thin films for application in photovoltaics

Enhancing the optoelectronic properties of solution-processed AgInSe2 thin films for application in photovoltaics

Accurate Ab Initio Calculations on Various PV-Based Materials: Which Functional to Be Used?

Reaction Tailoring for Synthesis of Phase‐Pure Nanocrystals of AgInSe2, Cu3SbSe3 and CuSbSe2

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Product

Resources

About

Enhancing the optoelectronic properties of solution-processed AgInSe₂ thin films for application in photovoltaics

Enhancing the optoelectronic properties of solution-processed AgInSe₂ thin films for application in photovoltaics

Reaction Tailoring for Synthesis of Phase‐Pure Nanocrystals of AgInSe₂, Cu₃SbSe₃ and CuSbSe₂