Production and Characterization of AlNiOZnOp-SiAl Composite Photodiodes for Solar Energy Tracking Systems

Abstract

In present study, NiO:ZnO thin films in molar ratios of 1:0, 0:1, 3:1, 1:1 and 1:3 were formed on p-Si layers with Aluminium (Al) bottom contact. The dynamic sol-gel spin coating method was used as coating method. The Al top contacts were deposited on thin films and Al/NiO:ZnO/p-Si/Al photodiodes were fabricated. The structural and morphological properties of the photodiodes were determined by X-ray diffraction (XRD), emission scanning electron microscopy (FE-SEM), and energy dispersive X-ray spectroscopy (EDX). The photoresponse and electrical properties of the produced photodiodes were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Al/NiO:ZnO/p-Si/Al photodiodes were successfully fabricated. It was determined that the thin films were composed of nanostructures. All photodiodes are sensitive to light. It was seen that the photosensitivity of composite photodiodes was higher than the pure photodiodes and photosensitivity decreased as the ZnO ratio increased. It was determined that the most sensitive photodiode to light was the composite photodiode with a NiO:ZnO ratio of 3:1, and the highest photosensitivity was measured as 3.12 x 10 3 at 100 mW/cm 2 light intensity in this photodiode. In all photodiodes, the capacitance values decreased as the frequency increased. The results show that by changing the NiO:ZnO ratio, the photoresponse and electrical parameters of the photodiodes can be controlled and the produced photodiodes can be used as a photosensor in solar tracking systems and optoelectronic applications.

Photo-electrical Characterization of New CuAlNi/n-Si/Al Schottky Photodiode Fabricated by Coating Thin-Film Smart Material

“…The capacitance-voltage (C-V) curves of the photodiode obtained at different step frequencies are presented in Figure 8 (due to the opposite probe poles used in the C-V measurement the left voltage side in this figure is actually reverse bias region). According to these C-V curves, the capacitance of the SMA-photodiode changes by change of frequency and applied voltage [28,[33][34][35][36][54][55][56]. The higher frequency, the lower capacitance.…”

“…The higher frequency, the lower capacitance. Because the electrons cannot chase the ac current at high frequencies and therefore they don't contribute to the total capacitance at high frequencies [23,[54][55][56]. The capacitance of the photodiode becomes zero in the forward bias region at all frequencies.…”

Prototype Development for Solar Energy Tracking Based on Arduino in QUEST Campus Larkana

“…Photovoltaic (PV) solar energy is a popular choice for residential properties due to its cost-effectiveness. and ease of installation compared to other options like Stirling dish parabolic collectors and parabolic cylinder collectors [8]. The renewed focus is being given to improving the performance of photovoltaic installations through various techniques, concentration lenses [9], integrated panels [10], advanced solar cell development [11], and optimized conversion stages are underway [12].…”