2015
DOI: 10.1117/12.2194079
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Product layout induced topography effects on intrafield levelling

Abstract: International audienceWith continuing dimension shrinkage using the TWINSCAN NXT:1950i scanner on the 28nm node and beyond, the imaging depth of focus (DOF) becomes more critical. Focus budget breakdown studies [Ref 2, 5] show that even though the intrafield component stays the same, it becomes a larger relative percentage of the overall DOF. Process induced topography along with reduced Process Window can lead to yield limitations and defectivity issues on the wafer. In a previous paper, the feasibility of an… Show more

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Cited by 2 publications
(3 citation statements)
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“…image plane deviation measured by FOCAL) can also effect the BF of a single pattern differently across the field [15]. The wafer topography also has an intrafield component showing non-correctable systematics that are tightly linked to the onproduct focus [2]. For a given pattern, best focus depends on the intrafield position of each of its occurrences across field.…”
Section: -Intrafield Focus Controlmentioning
confidence: 98%
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“…image plane deviation measured by FOCAL) can also effect the BF of a single pattern differently across the field [15]. The wafer topography also has an intrafield component showing non-correctable systematics that are tightly linked to the onproduct focus [2]. For a given pattern, best focus depends on the intrafield position of each of its occurrences across field.…”
Section: -Intrafield Focus Controlmentioning
confidence: 98%
“…The concept of the multi-source focus correlation method was presented in 2015 [1,2]. A more accurate understanding of real on-product focus can be obtained by gathering information from different sectors: design, scanner short loop monitoring, scanner leveling, on-product focus and topography.…”
Section: Introductionmentioning
confidence: 99%
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