Processing Uniformity Improvement by Magnetic Field Distribution Control in Electron Cyclotron Resonance Plasma Chamber

Abstract

A novel ECR processing apparatus has been developed. Processing uniformity can be improved by controlling the magnetic field distribution in the ECR plasma chamber. Excellent uniformity of.+t% on six-inch wafers and +ZVo on eight-inch wafers has been obtained for SiO, deposition. The conditions required for the specimen processing, such as ion peqpendicular incidenc{ can be decided independently of uniformity control because the uniformity is controlled only in the plasma generation region. This method can be also applied to ECR ion-stream etching.