Processing and Technology

Metal oxide semiconductor thin-film transistors for flexible electronics

“…85 However, in MOSFET technology, the substrate is a single crystal Si wafer (representing also the active layer) and device functionality is added through a large variety of complex, high temperature (>1000 C) and expensive processes (e.g., diffusion/implantation of dopants, lithography, and etching). 86 On the other hand, TFTs are fabricated typically on insulating substrates (glass and plastic), on which all the device layers are grown at lower temperature (<650 C) by vacuum-or solution-processing deposition techniques. Given the different manufacturing processes, the active layers of TFTs are typically poly-crystalline or amorphous materials, which are both characterized by a reduced charge carrier transport (if compared with single-crystal Si).…”