Processing and parameters of sol-gel PZT thin-films for GaAs memory applications

Dey, Satadru; Zuleeg, R.

doi:10.1080/00150199008008235

Cited by 89 publications

(13 citation statements)

References 18 publications

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“…Another thing needs to be considered is the location of the Fermi level which lies always in the band gap in such a way that to maintain the charge neutrality. In the case of present work of PZ and also earlier work reported on PZT, 33,34,36 it may be revealing that the relative positions of the energy levels of shallow and deep traps with respect to the Fermi level are almost the same.…”

Section: I-v Measurementsmentioning

confidence: 53%

Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation

Bharadwaja

Krupanidhi

1999

Journal of Applied Physics

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Antiferroelectric lead zirconate ͑PZ͒ thin films were deposited by pulsed laser ablation on platinum-coated silicon substrates. Films showed a polycrystalline pervoskite structure upon annealing at 650°C for 5-10 min. Dielectric properties were investigated as a function of temperature and frequency. The dielectric constant of PZ films was 220 at 100 kHz with a dissipation factor of 0.03. The electric field induced transformation from the antiferroelectric phase to the ferroelectric phase was observed through the polarization change, using a Sawyer-Tower circuit. The maximum polarization value obtained was 40 C/cm 2 . The average fields to excite the ferroelectric state, and to reverse to the antiferroelectric state were 71 and 140 kV/cm, respectively. The field induced switching was also observed through double maxima in capacitance-voltage characteristics. Leakage current was studied in terms of current versus time and current versus voltage measurements. A leakage current density of 5ϫ10 Ϫ7 A/cm 2 at 3 V, for a film of 0.7 m thickness, was noted at room temperature. The trap mechanism was investigated in detail in lead zirconate thin films based upon a space charge limited conduction mechanism. The films showed a backward switching time of less than 90 ns at room temperature.

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Section: I-v Measurementsmentioning

confidence: 53%

Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation

Bharadwaja

Krupanidhi

1999

Journal of Applied Physics

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“…[15][16][17] An early report on the deposition of epitaxial (Pb, La)(Zr, Ti)O 3 (PLZT) thin films on GaAs and GaP substrates for electro-optics and nonlinear optics 18 was followed by the deposition of PZT films on GaAs for FeRAMs. 19,20 Recently, the integration of PZT on cubic and wurtzite GaN for potential applications in microwave power and optoelectronic devices, as well as metal-ferroelectric-semiconductor field effect transistor (MFSFET) devices, has been demonstrated. 18,[21][22][23][24][25][26] Moreover, due to multiple advantages of wide band gap GaN as a resonator material, the ferroelectric PZT/semiconductor GaN heterostructure is being explored in radio-frequency (rf) microelectromechanical systems (MEMS) devices for insertion in rf communication systems.…”

Section: Introductionmentioning

confidence: 99%

Highly textured Pb(Zr_0.3Ti_0.7)O₃ thin films on GaN/sapphire by metalorganic chemical vapor deposition

Dey¹,

Cao²,

Bhaskar³

et al. 2006

J. Mater. Res.

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Highly (111) textured Pb(Zr 0.3 Ti 0.7 )O 3 (PZT 30/70) films were deposited on (0001) GaN/sapphire substrates using liquid-source metalorganic chemical vapor deposition (MOCVD) technique at 520°C and 80 nm/min. The crystallinity of as-deposited PZT films and the structure of PZT/GaN interface were evaluated by x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM), respectively. Mitigated by geometric epitaxy and strain energy minimization, the orientation relationships of PZT on epi-GaN, determined using x-ray pole figure and selected area diffraction pattern, were as follows: out-of-plane alignment of [111] PZT//[0001] GaN, and orthogonal in-plane alignments of [112] PZT//[1100] GaN (zone axes) and [110] PZT//[1120]GaN. The nanochemistry of the PZT (150nm)/GaN interface, studied using analytical TEM, indicated a chemically sharp interface with interdiffusion limited to a region below 5 nm. The properties of as-deposited PZT on GaN by MOCVD are briefly compared with PZT by sol-gel processing, radio-frequency sputtering, and pulsed laser deposition.

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“…This value is of the same order as other reports. 15,16 It worth noting that the above value is a free carrier concentration, while the previous reports refer to fixed or trapped charges. The concentration is frequency and temperature independent up to 1 MHz and 170°C, respectively, suggesting a complete ionization of the doping impurity and a negligible contribution from deep traps, at least for the time scale of the dc voltage change during the C-V measurement.…”

mentioning

confidence: 97%

Polarization reversal and capacitance-voltage characteristic of epitaxial Pb(Zr,Ti)O3 layers

Pintilie

Lisca

Alexe

2005

Applied Physics Letters

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Capacitance-voltage (C–V) measurements were performed on epitaxial layers of Pb(Zr0.2Ti0.8)O3 (PZT) with top and bottom SrRuO3 (SRO) electrodes. It is shown that the sharp capacitance peak∕discontinuity which is present in the C–V characteristics at different frequencies is directly associated with the polarization reversal. The ferroelectric film is assumed as a large band-gap semiconductor with Schottky contacts at the metal-ferroelectric interfaces. The capacitance discontinuity at the reversal (coercive) voltage is associated with a discontinuity in the built-in potential at the PZT∕SRO interfaces. The C–V characteristics for voltage ranges outside the coercive values can be used to extract the free carrier concentrations as in the case of Schottky metal-semiconductor contacts. The carrier concentration was found to be (2–4)×1018cm−3, independent of measuring frequency and temperature up to 1 MHz and 170 °C, respectively, suggesting completely ionized shallow impurities.

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Processing and parameters of sol-gel PZT thin-films for GaAs memory applications

Cited by 89 publications

References 18 publications

Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation

Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation

Highly textured Pb(Zr_0.3Ti_0.7)O₃ thin films on GaN/sapphire by metalorganic chemical vapor deposition

Polarization reversal and capacitance-voltage characteristic of epitaxial Pb(Zr,Ti)O3 layers

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Processing and parameters of sol-gel PZT thin-films for GaAs memory applications

Cited by 89 publications

References 18 publications

Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation

Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation

Highly textured Pb(Zr0.3Ti0.7)O3 thin films on GaN/sapphire by metalorganic chemical vapor deposition

Polarization reversal and capacitance-voltage characteristic of epitaxial Pb(Zr,Ti)O3 layers

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Highly textured Pb(Zr_0.3Ti_0.7)O₃ thin films on GaN/sapphire by metalorganic chemical vapor deposition