We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires. For 80-nm wires, the hole concentration is less than 30% of that for bulk Bi, a finding that is consistent with current models of quantum confinement effects. However, 30-nm-diameter nanowires, which are predicted to be semiconductors, show a nearly isotropic short period of 0.025 T -1 , consistent with a heavy carrier concentration five times that of bulk Bi. These results are discussed in terms of surface-induced charge carriers in a spherical Fermi surface pocket that are uniformly distributed in the 30-nm nanowire volume and that inhibit the semimetal-tosemiconductor transition.