2009
DOI: 10.1016/j.jallcom.2008.09.132
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A simple approach for the growth of highly ordered ZnO nanotube arrays

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Cited by 28 publications
(11 citation statements)
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“…One-dimensional (1D) ZnO nanowires have been regarded as one of the most promising candidates for nanoscale electronic and optoelectronic devices including nanogenerators, nanolasers, field-effect transistors, optical switches and UV photodetectors due to its wide direct band gap of 3.37 eV and large exciton binding energy of 60 meV [1][2][3][4][5][6][7][8][9][10]. The optical properties of ZnO nanowires have attracted considerable attention because of its near-bandedge (NBE) ultraviolet (UV) emissions and potential applications in nanolasers and UV detectors [11][12][13][14][15][16][17].…”
Section: Introductionmentioning
confidence: 99%
“…One-dimensional (1D) ZnO nanowires have been regarded as one of the most promising candidates for nanoscale electronic and optoelectronic devices including nanogenerators, nanolasers, field-effect transistors, optical switches and UV photodetectors due to its wide direct band gap of 3.37 eV and large exciton binding energy of 60 meV [1][2][3][4][5][6][7][8][9][10]. The optical properties of ZnO nanowires have attracted considerable attention because of its near-bandedge (NBE) ultraviolet (UV) emissions and potential applications in nanolasers and UV detectors [11][12][13][14][15][16][17].…”
Section: Introductionmentioning
confidence: 99%
“…ZnO nanostructure possess novel electronic and optical properties with applications such as room-temperature ultraviolet (UV) lasers, field-effect transistors, photodetectors, gas sensors, and dye sensitized solar cells [17,18]. It is reported that the chemical routes are easy and convenient for the synthesis of ZnO nanostructures [1,[19][20][21]. Electrochemical deposition technique is convenient and fast method to deposit metals on large scale onto the conducting substrates.…”
Section: Introductionmentioning
confidence: 99%
“…Zinc oxide (ZnO), a direct wide band gap (3.37 eV) semiconductor with large exciton binding energy (60 meV), is considered as one of the most important semiconductors for its wide applications in optoelectronics, sensors and actuators [1][2][3][4][5]. In recent years, one-dimensional (1D) nanowires have attracted a great research attention due to their wide usage as nanopiezotronics nanosensors, nanogenerators, nanoelectronics and nanolasers [6][7][8][9][10][11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%