Process of Formation of Vacuum Polymer Films in the HF Discharge Reactor

Luchnikov, P A; Surzhikova, O A

doi:10.1088/1757-899x/189/1/012014

Cited by 3 publications

(4 citation statements)

References 9 publications

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“…These are the degree of ionization of the working gas medium, the velocity and density of the flux of the sputtered particles in the plasma [3,4], the temperature interval of coating deposition, the surface state of the substrate, etc. [5][6][7]. Similar carbon composites are used in emission electronics and as wear-resistant coatings in friction units.…”

Section: Introductionmentioning

confidence: 99%

The Structure and Mechanical Properties of Multilayer Metal-Carbon Coatings Deposited in Pulse Plasma of Arc Discharge

Piliptsou

Rogachev

Руденков

et al. 2018

KEM

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The influence of the architecture of multilayer metal-carbon coatings, the nature of individual metallic layers (Ti, Cu), heat treatment parameters on their microhardness, the level of internal stresses and tribotechnical properties are determined. It is defined that for systems based on carbon and nanosized metal layers, the friction coefficient values are lower than for single-layer carbon coatings. Heat treatment of multilayer systems in air leads to the increase in the friction coefficient, primarily Ti/a-C/Ti coatings, which is due to the formation of solid phases of TiN, TiC and TiCN, as well as oxides of TixOy acting as abrasive. The level of internal stresses of multilayer systems containing layers of copper is lower than that of single-layer carbon coatings and coatings containing layers of titanium.

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Section: Introductionmentioning

confidence: 99%

The Structure and Mechanical Properties of Multilayer Metal-Carbon Coatings Deposited in Pulse Plasma of Arc Discharge

Piliptsou

Rogachev

Руденков

et al. 2018

KEM

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“…Unique physical properties of ferroelectric materials (high dielectric permittivity which changes in external electric field) allow us to create a novel class of layered metal-insulator-semiconductor (MIS) structures for electronic storage and computation devices in which ferroelectric thin film acts as the active element [1][2][3][4]. Ferroelectric thin film-based heterostructures are promising nanosystems for modern microelectronics in terms of non-volatile memory [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…There is a technology to deposit ferroelectric films by the sol-gel method onto a silicon wafer, where a sequence of intermediate metal layers on its surface is used [2,5,6]. During vacuum deposition of insulator thin films, the most effective method of deposition is the technique of sputtering the given insulator in the argon operation medium in the HF discharge [7][8][9]. This technology of insulator thin film sputtering is fairly compatible with vacuum technologies of microelectronic device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Acquiring MIS Structures Based on Bа0.8Sr0.2TiО3 Ferroelectric Films and their Properties

Afanasyev

Nabiev

Чучева

et al. 2018

KEM

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The paper considers formation of Ba0.8Sr0.2TiO3 ferroelectric films of MIS structures on silicon wafer with magnetron sputtering in HF discharge of the initial target material from the polycrystal ferroelectric in the oxygen atmosphere. Dielectric and volt-farad characteristics of MIS structures have been explored, depending on formation modes of Ba0.8Sr0.2TiO3 ferroelectric films. The authors determined technological modes of film deposition for acquiring MIS structures with the best electrophysical properties.

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“…Magnetron sputtering (MS) is one of the most usable technological process of thin film deposition of different materials for microelectronics and power electronics devices [1][2][3][4]. But the deposition rates of the magnetron sputtering from solid target are relatively low so the deposition of the thick films (up to ~ 50 µm) could last up to several hours.…”

Section: Introductionmentioning

confidence: 99%

Technological Features of the Thick Tin Film Deposition by with Magnetron Sputtering Form Liquid-Phase Target

Макарова

Moiseev

Назаренко³

et al. 2018

KEM

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Technological features of obtaining of tin films in a vacuum by liquid-phase target magnetron sputtering were reviewed. With high deposition rate the white color tin coating with amorphous structure is formed on the substrate. X-ray microanalysis of the obtained tin films showed the presence of micro-and nanoparticles of an impurity of the crucible material in the structure of the films. The use of the tantalum crucible with liquid-phase target magnetron sputtering with deposition rate of 3.2 μm / min allows obtaining ultra-pure, continuous, homogeneous tin film on a stationary substrate without impurity material of the crucible.

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Process of Formation of Vacuum Polymer Films in the HF Discharge Reactor

Cited by 3 publications

References 9 publications

The Structure and Mechanical Properties of Multilayer Metal-Carbon Coatings Deposited in Pulse Plasma of Arc Discharge

The Structure and Mechanical Properties of Multilayer Metal-Carbon Coatings Deposited in Pulse Plasma of Arc Discharge

Acquiring MIS Structures Based on Bа<sub>0.8</sub>Sr<sub>0.2</sub>TiО<sub>3 </sub>Ferroelectric Films and their Properties

Technological Features of the Thick Tin Film Deposition by with Magnetron Sputtering Form Liquid-Phase Target

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