Process-induced charging damage in IGZO nTFTs

Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search

“…3 Probably the best-known demonstration of a successful amorphous oxide is the introduction of InGaZnO 4 (IGZO) as a transistor channel material. IGZO found its application first in thinfilm-transistor (TFT) display backplanes, [4][5][6][7][8][9] and more recently as a transistor channel material for Static Random Access Memory (SRAM) 10 or as a memory selector in Dynamic Random Access Memory (DRAM) devices. 9,[11][12][13][14][15] However, introducing amorphous oxides as transistor channels requires gaining a tight control on the different doping sources to ensure a proper device operation and a low access contact resistance.…”

“…IGZO found its application first in thinfilm-transistor (TFT) display backplanes, [4][5][6][7][8][9] and more recently as a transistor channel material for Static Random Access Memory (SRAM) 10 or as a memory selector in Dynamic Random Access Memory (DRAM) devices. 9,[11][12][13][14][15] However, introducing amorphous oxides as transistor channels requires gaining a tight control on the different doping sources to ensure a proper device operation and a low access contact resistance. In particular, the electron mobility and chemical stability of IGZO are far from being ideal, with a high sensitivity to hydrogen inclusion and oxygen depletion sources, 3,[16][17][18][19][20][21] leading to complex integration schemes.…”

Performance Improvement by Double-Layer a-IGZO TFTs With a Top Barrier

“…Amorphous InGaZnO (a-IGZO) is a promising channel material due to its low processing temperature, low leakage current, high uniformity, and high mobility. IGZO TFTs enable various applications such as large-size active matrix displays [1], monolithic 3D stacking [2], backend of line (BEOL) transistors [3], dynamic random access memory (DRAM) [4], and neuromorphic computations [5].…”

Oxygen Defect Stability in Amorphous, C-Axis Aligned, and Spinel IGZO

“…While doping control is crucial in traditional silicon-based semiconductor devices, it truly becomes paramount with the development of thin-film transistors and the shrinking of their dimensions in current and future technology nodes. The introduction of new materials like amorphous InGaZnO 4 (IGZO) as a transistor channel source in thin-film-transistor (TFT) display backplane for display applications − and, more recently, as a transistor channel material for Static Random Access Memory (SRAM) or as a memory selector in memory devices ,− requires gaining a tighter control on the different doping sources to ensure a proper device operation and a low access contact resistance. Amorphous materials, in general, allow for lower deposition temperatures, enabling more complex device structures and large-area fabrication on plastic substrates. , Amorphous metal oxides, moreover, tend to have higher mobility than amorphous silicon …”