Process control for low temperature reactive deposition of Al doped ZnO films by ICP-assisted DC magnetron sputtering

Jung, Sung-mok; Koo, Bonil; Han, Y.H.; Lee, J.J.; Joo, Ji Bong

doi:10.1016/j.surfcoat.2005.02.207

Cited by 17 publications

(1 citation statement)

References 12 publications

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“…Pure or Al-doped ZnO (AZO) films have been considered as possible transparent conducting materials since they present high conductivity, good optical transmittance, and low-cost fabrication. [1][2][3][4][5] For the preparation of AZO films, various techniques have been employed, such as magnetron sputtering, 6-8 thermal evaporation, 9 pulsed laser deposition (PLD), 10 chemical vapor deposition (CVD), 11 molecular-beam epitaxy (MBE), 12 sol gel, 13 and spray pyrolysis. 14 However, little attention has been devoted to AZO films prepared by ion-beam sputtering deposition (IBSD).…”

Section: Introductionmentioning

confidence: 99%

The Influence of Film Thickness on the Transparency and Conductivity of Al-Doped ZnO Thin Films Fabricated by Ion-Beam Sputtering

Liang

Fan

Cai

et al. 2011

Journal of Elec Materi

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To evaluate the influence of film thickness on the structural, electrical, and optical properties of Al-doped ZnO (AZO) films, a set of polycrystalline AZO samples with different thickness were deposited on glass substrates by ionbeam sputtering deposition (IBSD). X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive x-ray spectroscopy (EDS), four-point probe measurements, and spectrophotometry were used to characterize the films. XRD showed that all the AZO films had preferred c-axis orientation. The ZnO (110) peak appeared, and the intensity increased, with increasing thickness. All the samples exhibited compressive intrinsic stresses. AFM showed that the grain size along with the root-mean-square (RMS) roughness increased with increasing thickness. The decrease of resistivity is due to the corresponding change in grain size, surface morphology, and chemical composition. The average optical transmittance of the AZO films was over 80%, and a sharp fundamental absorption edge with red-shifting was observed in the visible region. The optical band gap decreased from 3.95 eV to 3.80 eV when the AZO film thickness increased from 100 nm to 500 nm.

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Section: Introductionmentioning

confidence: 99%

The Influence of Film Thickness on the Transparency and Conductivity of Al-Doped ZnO Thin Films Fabricated by Ion-Beam Sputtering

Liang

Fan

Cai

et al. 2011

Journal of Elec Materi

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The Photocatalytic Property of TiO2 Films Deposited at Low Temperature

Han

Jung

Lee

2007

Plasma Process. Polym.

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TiO2 films with high crystallinity were produced by inductively coupled plasma (ICP)‐assisted reactive magnetron sputtering without extra heating of the substrate. In spite of the low process temperature, the deposition rate was >400 min−1 and the polycrystalline anatase phase was obtained. The TiO2 films were characterized by X‐ray diffraction (XRD), Auger electron spectroscopy (AES), and Rutherford back‐scattering spectrometry (RBS). The photocatalytic ability of the TiO2 film was analyzed by measuring the photocurrent and decomposition rate of methylene blue. The photocatalytic ability of anatase effectively decomposed methylene blue and generated a photocurrent of over 0.2 mA · cm−2 in UV condition. The maximum open circuit voltage (Voc) was about 0.520 V.

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Study of Plasma Properties for the Low‐Temperature Deposition of Highly Conductive Aluminum Doped ZnO Film Using ICP Assisted DC Magnetron Sputtering

Sahu

Han

Kim

et al. 2015

Plasma Processes & Polymers

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This work reports an investigation of the Al‐doped ZnO (AZO) film deposition process using ICP assisted DC magnetron plasmas, at different working pressures. The mechanism of plasma formation and plasma properties are analyzed by various diagnostic tools. Data show that there is the presence of low‐frequency oscillations in the range of 3–8 MHz, which are expected to be caused by high‐frequency waves. It is seen that ICP source is quite capable of producing the high‐energy warm electrons that are expected to be produced by the Landau damping. The plasma properties and their role on the electrical and structural properties of the AZO film are carefully studied. This work also reports the deposition of high conductive AZO films with resistivity as low as ∼ 6.8 × 10−4 cm using low‐temperature process.

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Process control for low temperature reactive deposition of Al doped ZnO films by ICP-assisted DC magnetron sputtering

Cited by 17 publications

References 12 publications

The Influence of Film Thickness on the Transparency and Conductivity of Al-Doped ZnO Thin Films Fabricated by Ion-Beam Sputtering

The Influence of Film Thickness on the Transparency and Conductivity of Al-Doped ZnO Thin Films Fabricated by Ion-Beam Sputtering

The Photocatalytic Property of TiO2 Films Deposited at Low Temperature

Study of Plasma Properties for the Low‐Temperature Deposition of Highly Conductive Aluminum Doped ZnO Film Using ICP Assisted DC Magnetron Sputtering

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