Process and properties of Pt/Pb(Zr, Ti)O<sub>3</sub>/Pt integrated ferroelectric capacitors

Torii, Kazuyoshi; Kawakami, Hiroshi; Miki, Hiroshi; Kushida, Keiko; Itoga, Toshihiko; Goto, Yuki; Kumihashi, Takashi; Yokoyama, N.; Moniwa, Masahiro; Shoji, K.; Kaga, T.; Fujisaki, Yasumasa

doi:10.1080/10584589708013026

Cited by 25 publications

(2 citation statements)

References 2 publications

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“…The etching damage is more severe when the pattern size of PZT film is decreased to nanometer dimensions because of the 'side wall effect'. Recently, much attention has been paid to minimize the etching damage [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric Response of PZT Nanostructures Obtained by Focused Ion Beam

Rémiens

Liang

Tománek

et al. 2008

Integrated Ferroelectrics

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Pb(Zr x ,Ti 1−x )O 3 (PZT) microscale island (1µm∼100 nm) was fabricated by Focused Ion Beam (FIB) before and after its crystallization. In the first case the FIB etching is realized on amorphous films and a post annealing treatment, at the crystallization temperature of the PZT films, is necessary to cristallize the film in the perovskite phase. In the second case the etching are made on crystallized films. Local electrical properties were evaluated by piezoresponse force microscopy (PFM) technique and the degradations induce in the films are studies by Raman spectroscopy. Compared to the PZT island fabricated after crystallization, the result shows that there is noticeable enhancement in nanoscale electrical properties of PZT island fabricated before crystallization, especially when the island size decreases.

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Section: Introductionmentioning

confidence: 99%

Piezoelectric Response of PZT Nanostructures Obtained by Focused Ion Beam

Rémiens

Liang

Tománek

et al. 2008

Integrated Ferroelectrics

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“…Currently, there is intense interest in using high-permittivity thin films for storage-node capacitor applications in dynamic random-access memory [1][2][3][4][5][6][7] and nonvolatile ferroelectric random-access memory [8][9][10] devices. Currently, there is intense interest in using high-permittivity thin films for storage-node capacitor applications in dynamic random-access memory [1][2][3][4][5][6][7] and nonvolatile ferroelectric random-access memory [8][9][10] devices.…”

Section: Introductionmentioning

confidence: 99%

A study of platinum electrode patterning in a reactive ion etcher

Chang

Apen

Kottke

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Dependence of indium-tin-oxide work function on surface cleaning method as studied by ultraviolet and x-ray photoemission spectroscopies This article addresses the problem of Pt electrode etching through the use of a batch load production reactive ion etch ͑RIE͒ tool to study etching characteristics and the cleanliness of patterned films with pressure, total gas flow, and percent of Cl 2 in Ar as variables, and considers some of the environmental, health, and safety issues. The results show that Pt etching is primarily a sputter etch process in which the Cl 2 percentage has little impact on the Pt removal rate, but does significantly affect etch uniformity across the wafer and the surface cleanliness as analyzed with Auger electron spectroscopy. The maximum Pt etch rate achieved was about 5 nm/min with good etch uniformity and surface cleanliness. X-ray photoelectron spectroscopy of the etch by-products shows the presence of PtCl 2 and PtCl 4 when the Ar-Cl 2 etch chemistry was used. These results provide useful information to address material redeposition, wafer cleaning, and etch chamber cleaning safety issues, major concerns in the RIE of Pt.

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An oxidation barrier layer for metal–insulator–metal capacitors: ruthenium silicide

Matsui

Nakamura²,

Shimamoto

et al. 2003

Thin Solid Films

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Process and properties of Pt/Pb(Zr, Ti)O₃/Pt integrated ferroelectric capacitors

Cited by 25 publications

References 2 publications

Piezoelectric Response of PZT Nanostructures Obtained by Focused Ion Beam

Piezoelectric Response of PZT Nanostructures Obtained by Focused Ion Beam

A study of platinum electrode patterning in a reactive ion etcher

An oxidation barrier layer for metal–insulator–metal capacitors: ruthenium silicide

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Process and properties of Pt/Pb(Zr, Ti)O3/Pt integrated ferroelectric capacitors

Cited by 25 publications

References 2 publications

Piezoelectric Response of PZT Nanostructures Obtained by Focused Ion Beam

Piezoelectric Response of PZT Nanostructures Obtained by Focused Ion Beam

A study of platinum electrode patterning in a reactive ion etcher

An oxidation barrier layer for metal–insulator–metal capacitors: ruthenium silicide

Contact Info

Product

Resources

About

Process and properties of Pt/Pb(Zr, Ti)O₃/Pt integrated ferroelectric capacitors