Probing surface and interface morphology with Grazing Incidence Small Angle X-Ray Scattering

Renaud, Gilles; Lazzari, Rémi; Leroy, F.

doi:10.1016/j.surfrep.2009.07.002

Cited by 687 publications

(744 citation statements)

References 534 publications

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“…This is to be expected as a scattering enhancement is known to occur at an exit angle which equals the critical angle of the sample (Yoneda peak). 30 Because the critical angle at 5 keV is higher for Ru (α crit,Ru = 0.764 • ) than for Si (α crit,Si = 0.361 • ), the scattering enhancement appears at higher exit angles, and thus higher q z -values, when the SiO 2 surface gets more and more covered with Ru. A scanning electron microscopy (SEM) image taken after the deposition confirms a particulated Ru morphology ( Figure 6(d)).…”

Section: B In Situ Gisaxsmentioning

confidence: 98%

“…12,16,19 GISAXS is a scattering technique used to study the morphology of nanoscale objects at surfaces, interfaces, or in thin films. 30 In ALD research, in situ GISAXS has been applied to investigate conformal deposition in porous thin films 18 and on a layer of semiconducting quantum dots. 23 In addition, GISAXS is greatly suitable for monitoring the morphological evolution during ALD of noble metals.…”

Section: Introductionmentioning

confidence: 99%

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Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

Dendooven

Solano

Minjauw

et al. 2016

Review of Scientific Instruments

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We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron facilities. The setup consists of a compact high vacuum pump-type reactor for atomic layer deposition (ALD). The presence of a remote radio frequency plasma source enables in situ experiments during both thermal as well as plasma-enhanced ALD. The system has been successfully installed at different beam line end stations at the European Synchrotron Radiation Facility and SOLEIL synchrotrons. Examples are discussed of in situ GISAXS and XRF measurements during thermal and plasma-enhanced ALD growth of ruthenium from RuO4 (ToRuS™, Air Liquide) and H2 or H2 plasma, providing insights in the nucleation behavior of these processes.

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Section: B In Situ Gisaxsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

Dendooven

Solano

Minjauw

et al. 2016

Review of Scientific Instruments

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“…However, this method is not applicable for polycrystalline coatings. In situ small-angle X-ray scattering methods such as, for example, GISAXS or in situ X-ray reflectivity (XRR) measurements are independent of the crystalline structure and can be applied to almost any coating (Renaud et al, 2009;Yu et al, 2013). For ex situ samples, XRR is a well established method used by a large community (Tolan, 1999).…”

Section: Introductionmentioning

confidence: 99%

Monitoring the thin film formation during sputter deposition of vanadium carbide

Kaufholz

Krause

Kotapati

et al. 2015

J Synchrotron Radiat

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The thin film formation of magnetron sputtered polycrystalline coatings was monitored by in situ X-ray reflectivity measurements. The measured intensity was analyzed using the Parratt algorithm for time-dependent thin film systems. Guidelines for the on-line interpretation of the data were developed. For thick coatings, the experimental resolution needs to be included in the data evaluation in order to avoid misinterpretations. Based on a simple layer model, the timedependent mean electron density, roughness and growth velocity were extracted from the data. As an example, the method was applied to the hard coating material vanadium carbide. Both instantaneous and slowly varying changes of the coating could be detected. It was shown that the growth velocity is proportional to the DC power. Significant changes of the microstructure induced by the working gas pressure are mainly driven by the chemical composition.

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“…Only very few examples of materials built from ligand-free clusters are known. These are clusters with a high stability such as the fullerenes and Sb 4 . From these ''magic'' clusters new materials have been successfully synthesized and it is shown that indeed the particles survive as individual entities.…”

Section: Introductionmentioning

confidence: 99%

Thin films of size-selected Mo clusters: growth modes and structures

Dollinger

Park

Strobel

et al. 2015

Phys. Chem. Chem. Phys.

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Probing surface and interface morphology with Grazing Incidence Small Angle X-Ray Scattering

Cited by 687 publications

References 534 publications

Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

Monitoring the thin film formation during sputter deposition of vanadium carbide

Thin films of size-selected Mo clusters: growth modes and structures

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