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Sanyal, Dirtha; Banerjee, D.; De, Uday Chand

doi:10.1103/physrevb.58.15226

Cited by 78 publications

(56 citation statements)

References 15 publications

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“…Observed τ 3 can be from the pick-off annihilation [12] of ortho-positroniums inside condensed matter. In polycrystalline samples, there exist micro-voids where positronium formation is favoured [11,14]. This process, although more likely in voids, has separate physical origin and not directly related to defect trapping of positrons.…”

Section: Methodsmentioning

confidence: 92%

“…A simple but most convenient, two state trapping model [12] assumes two processes, i) positron annihilation in defect free bulk and ii) the same after trapping at defects. The shortest lifetime (τ 1 ) is generally attributed to the annihilation of free positrons [14]. However, in disordered systems, smaller vacancies [11] or shallow positron traps [19] may contribute to τ 1 .…”

Section: Methodsmentioning

confidence: 99%

“…A standard PAL measurement [14] with slow fast coincidence assembly and data analysis along with necessary source correction has been carried out. The present PAL set-up has a time resolution 215±3 ps for the prompt 60 Co γ−rays at the experimental window settings with the upper 60% of the Compton continuum of the 1.28 MeV and 0.511 MeV γ−rays.…”

Section: Methodsmentioning

confidence: 99%

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Electrical resistivity peculiarities and positron lifetime in annealed CdO

Sarkar¹,

Chattopadhyay²,

2009

Phys. Status Solidi (c)

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Differently heat‐treated polycrystalline cadmium oxide (CdO) samples have been studied using room temperature (RT) resistivity, positron annihilation lifetime (PAL) and ultraviolet visible (UV‐Vis) optical absorption measurements. A small increase of the resistivity for 275 °C annealing (with respect to the other samples) and a large reduction of the same for 810 °C annealing have been observed. PAL investigation shows presence of defects, presumably Cd+O divacancy (VCd+O) clusters, in all the samples. Gradual defect recovery takes place with increasing annealing temperature. A clear defect recovery stage has been found above 400 °C annealing from where drastic fall of resistivity occurs. The optical band gaps (direct and indirect) of the 125 °C annealed sample comes out to be 1.89 eV and 0.79 eV. The indirect band gaps of the samples show anomalous variation due to 275 °C annealing which is also consistent with resistivity anomaly. To our knowledge, this is the first positron spectroscopic investigation on the CdO system. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 92%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Electrical resistivity peculiarities and positron lifetime in annealed CdO

Sarkar¹,

Chattopadhyay²,

2009

Phys. Status Solidi (c)

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“…tion of orthopositronium atoms formed in large pores [60], s 2 is due to positrons trapped by large size defects [62] located on the surface or subsurface of a sample [63], while the shortest lifetime component (s 1 ) generally arises from the annihilation of free positrons in the bulk section of a material [64]. Thus the relative intensities (I) of s 1 , s 2 , and s 3 provide information about the relative concentration of different defects [65,66].…”

Section: The Longest Lifetime Component (S 3 ) Is Attributed To the Amentioning

confidence: 98%

Fabrication of a PdAg mesocrystal catalyst for the partial hydrogenation of acetylene

Liu

Yang

et al. 2015

Journal of Catalysis

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“…Our previous work of positron annihilation lifetime measurement [6] [7] give an anomalous change in the S-parameter with temperature. In the polycrystalline HTSC 4 sample presence of large number of defects as well as grain boundaries may affect the positron annihilation parameters.…”

Section: Introductionmentioning

confidence: 99%

Anisotropy of the electron momentum distribution in Bi2Sr2CaCu2O8+δ superconductor studied by positron annihilation

Chakrabarti

Sarkar

Chattapadhayay

et al. 2003

Solid State Communications

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The temperature dependent (30 K to 300 K) Doppler broadening of the positron annihilated γ-radiation (DBPAR) measurement has been carried out on single crystalline Bi 2 Sr 2 CaCu 2 O 8+δ  (Bi-2212) high T c superconducting sample along two different crystallographic orientations. It has been observed that throughout the temperature range the electron momentum distribution has a relatively large value along the crystallographic c-axis than a-b plane. The temperature dependent DBPARL analysis shows a step like increase of S-parameter at the temperature region 92 K to116 K.

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Probing (Bi0.92Pb0.17)2

Cited by 78 publications

References 15 publications

Electrical resistivity peculiarities and positron lifetime in annealed CdO

Electrical resistivity peculiarities and positron lifetime in annealed CdO

Fabrication of a PdAg mesocrystal catalyst for the partial hydrogenation of acetylene

Anisotropy of the electron momentum distribution in Bi2Sr2CaCu2O8+δ superconductor studied by positron annihilation

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