1992
DOI: 10.1103/physrevb.46.12826
|View full text |Cite
|
Sign up to set email alerts
|

Probing hot-carrier transport and elastic scattering using ballistic-electron-emission microscopy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

2
23
1

Year Published

1995
1995
2001
2001

Publication Types

Select...
4
3

Relationship

0
7

Authors

Journals

citations
Cited by 48 publications
(26 citation statements)
references
References 10 publications
2
23
1
Order By: Relevance
“…By changing the semiconductor projected interface band structure, the experiment selects dierent regions in the 2D Brillouin zone (BZ), and the resulting changes observed in the BEEM current can be used to understand thek k distribution incoming from the metal side into the semiconductor. This point has been demonstrated by Schowalter and Lee [28], by performing experiments on Au ®lms A metalic ®lm, spatial resolution of %15 # A is deduced from experiment both for Au/Si(1 1 1) and Au/Si(1 0 0) ± not shown ± interfaces, indicating that transport is not simply ballistic (from [21]). …”
Section: Experimental Observationsmentioning
confidence: 60%
See 1 more Smart Citation
“…By changing the semiconductor projected interface band structure, the experiment selects dierent regions in the 2D Brillouin zone (BZ), and the resulting changes observed in the BEEM current can be used to understand thek k distribution incoming from the metal side into the semiconductor. This point has been demonstrated by Schowalter and Lee [28], by performing experiments on Au ®lms A metalic ®lm, spatial resolution of %15 # A is deduced from experiment both for Au/Si(1 1 1) and Au/Si(1 0 0) ± not shown ± interfaces, indicating that transport is not simply ballistic (from [21]). …”
Section: Experimental Observationsmentioning
confidence: 60%
“…The logical hypothesis is that it must be a consequence of sharp electronic beams impinging on the interface, but it is not clear how this could happen within the ballistic electron scenario. An elegant experiment proving this particular point comes from Milliken et al [21]: a BEEM scan is performed on Au/Si, but part of the interface is covered with an insulating layer blocking the transmission of electrons. The growth properties of this layer are well known, and allow the design of two sharply de®ned regions.…”
Section: Experimental Observationsmentioning
confidence: 99%
“…Two important and apparently irreconcilable results have been (i) the elegant demonstration of nanometric resolution (≈ 15Å) after propagation through films of as much as 100 − 150Å 4 , and (ii) the very similar results obtained for the interfaces with Si(111) and Si(100) 1,5,6 despite the strongly different k-space distribution of the projected Conduction Band Minima (CBM) available for injection of electrons into the semiconductor.…”
Section: Ballistic Electron Emission Microscopy (Beem)mentioning
confidence: 68%
“…BEEM images of the step riser, when the tip crosses from above a part corresponding to the impenetrable SiO 2 to a part, where BEEM injection into the Si is possible, give a direct reflection of the size of the electron beam at the interface. The typical 15Å found are absolutely incompatible with the standard ballistic, free particle propagation used in the simple model and are difficult to justify even if parametrized electron-electron/electron-phonon interaction is taken into account 4,5 . On the other hand, we believe that the observed formation of narrowly focused Kossel-like lines as caused by the Au band structure may already explain the experimentally obtained nanometric resolution in the purely elastic limit.…”
Section: Real Space Resultsmentioning
confidence: 96%
See 1 more Smart Citation