Probing heavy ion radiation effects in silicon carbide (SiC) via 3D integrated multimode vibrating diaphragms

Chen, Hailong; Jia, Hao; Liao, Wenjun; Pashaei, Vida; Arutt, Charles N.; McCurdy, Michael W.; Zorman, Christian A.; Reed, Robert A.; Schrimpf, R.D.; Alles, Michael L.; Feng, Philip X.‐L.

doi:10.1063/1.5063782

Cited by 7 publications

(6 citation statements)

References 22 publications

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“…This conclusion aligns consistently with prior studies examining the effects of ion radiation on MEMS resonators. [49,51] Thus, by Equations ( 1)-( 3), the relationship between the product E piezo d 31 , and L m , and C m can be expressed as:…”

Section: Bulk Acoustic Wave Resonatorsmentioning

confidence: 99%

“…[24,37,[44][45][46] The influence of X-ray radiation on the gauge factors of statically suspended GaN/AlN beams has also been reported. [47] Nearly all existing research [48][49][50][51] characterizes MEMS behavior pre-and post-irradiation but does not capture how device performance changes throughout the irradiation period. This work presents a method of determining damage coefficients that may be used to predict changes to MEMS resonator performance characteristics due to radiation in a similar fashion to what has been completed for Si bipolar and MOS technology (i.e., threshold voltage shifts, open circuit current, carrier lifetime).…”

Section: Introductionmentioning

confidence: 99%

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Impact of Silicon Ion Irradiation on Aluminum Nitride‐Transduced Microelectromechanical Resonators

Lynes,

Young,

Lang

et al. 2023

Adv Materials Inter

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Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro‐robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO2) thin film is unveiled. Aluminum nitride on silicon (AlN‐on‐Si) and AlN‐SiO2‐Si bulk acoustic wave (BAW) resonators are designed and fabricated. The devices are irradiated using 2 MeV Si+ ions at various fluxes up to a total fluence of 5 × 1014 cm−2. A time anneal is conducted to characterize device recovery. Scattering (S‐) parameters are measured in situ. Specific damage coefficients are derived to describe the radiation effect on resonant frequency (fr), quality factor (Q), motional resistance (Rm), and electromechanical coupling factor (). Furthermore, the damage coefficients for the bulk material properties of elastic modulus (E) and the piezoelectric coefficient (d31) are found.

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Section: Bulk Acoustic Wave Resonatorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of Silicon Ion Irradiation on Aluminum Nitride‐Transduced Microelectromechanical Resonators

Lynes,

Young,

Lang

et al. 2023

Adv Materials Inter

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“…[229][230][231] These resonating shifts of the perspective device are attributed to the structure and conditions of radiation exposure, the area of the diaphragms, and energetic heavy ions. [209] These studies provide an efficient route toward harsh environment-compatible SiC MEMS.…”

Section: (19 Of 34)mentioning

confidence: 99%

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confidence: 99%

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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These energetic particles, such as electrons, protons, neutrons, X-rays, or gamma rays, induced damage in materials (used in electronic devices) through total ionization and displacement, [4] which would affect the reliability of the electronic devices. [5][6][7] Electronics failure occurs in harsh and inaccessible environments through various paths, such as electromagnetic waves, nuclear reactions, and high-frequency communications systems. Therefore, the radiationhardened requirements of the deployed electronic technology depend on the specific high-energy photons and particles in the radiation environment. For example, Mars exploration requires a special proton anti-radiation in electronics. At the same time, the safety supervision and inspection of the contaminated nuclear area are suggested to be equipped with high resilience towards the alpha, beta, and gamma rays. The development of radiation-hard electric circuits over the years has led researchers to consider the application of functional anti-irradiation material to devices. The current focus is on developing complementary metal-oxide semiconductors (CMOS) with wide bandgap semiconductors (WBGs), which are well suited to large-area aerospace applications. [8][9][10] As shown in Figure 1, a notable material class of WBGs can be listed as metal oxides (MOS), transition-metal dichalcogenides (TMDs), silicon carbide, gallium nitride, and others. WBGs materials contribute robust properties under harsh conditions due to their strong electronic compliance, high-temperature competence, and strong atomic bond energy. [11][12][13][14][15][16] They have been proposed as favorable materials for aerospace and other radiation-hardened applications. Generally, the bandgap in the semiconductor reflects the extra energy that a valence electron must access to become a free electron. Its large bandgap of more than 3 eV guarantees inherent reliability in the semiconductors, providing transparency for the low-energy photons. The large, spherical nsorbitals in the conduction band (CB) of MOS also play a critical role in high dopability for hosting a high density of electrons, leading to the remarkably tolerance to various radiation fluences. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Understanding the apparent immunity of the WBGs to various radiation environments and radiation-hard electronic engineering would be critical for pushing the technology further and understanding its limitations. Efforts to address these issues have been underway over the past two decades. Substantial progress has also been made in designing radiation-hard thin films transistors (TFTs) with ZnO, Ga 2 O 3 , In 2 O 3 , SnO 2 , IGZO, SiC, GaN, and many other WBGs, The aspiration of electronic technologies that are resistant to high-energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post-processing after designing, making their structures more complex than the standard systems. Thus, unique de...

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“…Wide‐bandgap materials, such as III‐nitrides, silicon carbide (SiC), and diamond‐like carbon (DLC) have emerged as promising alternatives beyond Si, for MEMS to operate in harsh environments due to their superior electronic, mechanical, thermal, and chemical properties. [ 11–13 ] Among them, sputter‐deposited aluminum nitride (AlN) has attracted great attention for radio frequency (RF) applications due to its high acoustic phase velocity, low motional resistance, and CMOS compatibility. [ 14 ] As a nonferroelectric material, the piezoelectricity of AlN is limited by the critical temperature at which the chemical bonds break down, rather than by the Curie point.…”

Section: Introductionmentioning

confidence: 99%

AlScN‐on‐SiC Thin Film Micromachined Resonant Transducers Operating in High‐Temperature Environment up to 600 °C

Sui

Wang

Lee

et al. 2022

Adv Funct Materials

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The experimental demonstration of aluminum scandium nitride (AlScN)‐on‐cubic silicon carbide (SiC) heterostructure thin film micromachined resonant transducers operating in a high‐temperature environment up to 600 °C is reported. Macroscopic and microscopic vibrations are investigated through a combination of ultrasensitive laser interferometry techniques and Raman spectroscopy. An average linear temperature coefficient of resonance frequency (TCf) of <1 ppm °C−1 within the temperature range from room temperature to 200 °C, and an average linear TCf of −16 ppm °C−1 between 200 and 600 °C, from the fundamental‐mode resonance of AlScN/SiC circular diaphragm resonator with a thickness of 1.9 µm and diameter of 250 µm, is obtained. Higher‐order modes exhibit much larger TCf, which make them strong candidates as high‐temperature‐tolerant temperature sensors or ultraviolet detectors. Raman spectroscopy indicates that the turning points of the peak positions of the longitudinal optical phonon modes of both 3C‐SiC and AlScN occur in almost the same temperature region where the turnover point of TCf is observed, suggesting that the microscopic vibrations in the crystal lattice and the macroscopic oscillation of the diaphragm are naturally mediated by the residual strain inside the materials at varying temperature.

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Probing heavy ion radiation effects in silicon carbide (SiC) via 3D integrated multimode vibrating diaphragms

Cited by 7 publications

References 22 publications

Impact of Silicon Ion Irradiation on Aluminum Nitride‐Transduced Microelectromechanical Resonators

Impact of Silicon Ion Irradiation on Aluminum Nitride‐Transduced Microelectromechanical Resonators

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

AlScN‐on‐SiC Thin Film Micromachined Resonant Transducers Operating in High‐Temperature Environment up to 600 °C

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