Probing Electron Spin Resonance in Monolayer Graphene

Abstract

The precise value of the g-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding gfactor of 1.952+ − 0.002 is insensitive to charge carrier type, concentration, and mobility.

Electrical spin manipulation in graphene nanostructures

“…In both cases, the green arrows represent the magnetization calculated with a mean-field Hubbard model. spin resonance in graphene nanostructures, complementing recent experiments on electrically detected spin resonance in graphene [21,22].…”

Preparing dangling bonds by nanoholes on graphene oxide nanosheets and their enhanced magnetism

“…dangling bonds in materials from both qualitative and quantitative aspects. 40,41 The ESR signal intensity and the spin counts per mg of as-prepared solid samples were detected by the protocol in the section of Characterization. As shown in Fig.…”

Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts

“…The spin degree of freedom offers larger coherence times, but spins are notoriously difficult to manipulate. For materials with vanishing spin-orbit interaction, such as Si and C, the g-factor has been shown to be g s ∼ 2 close to the value for free electrons [1][2][3]. For materials with large spin orbit interactions,g-factors can get as large as g s ∼ 50 in the case of InSb [4].…”