Printed subthreshold organic transistors operating at high gain and ultralow power

Jiang, Chen; Choi, Hyung Woo; Cheng, Xiang; Ma, Hanbin; Hasko, D. G.; Nathan, Arokia

doi:10.1126/science.aav7057

Cited by 216 publications

(262 citation statements)

References 60 publications

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“…Generally, a flatter saturation output curve led to a higher output resistance r o = ∂ V D /∂ I D , which was good for increasing the intrinsic transistor gain ( A i = g m r o , where g m = ∂ I D /∂ V G ). Building Schottky barrier transistors with C8‐BTBT was reported to increase A i to 1100, a value orders higher than that of a conventional silicon MOSFET (Figure c) at the same I D . Such an organic SGT enabled the high‐gain inverter (260 V / V ) with low power consumption (<1 nw), as a high‐resolution amplifier circuit (<4 μV, electrophysiological signal level) was demonstrated for detecting human eye motion …”

Section: Utilizations Of Nonideal Ofetsmentioning

confidence: 94%

“…Despite the unwanted yet inevitable lowering of drain current, the Schottky barrier has been intentionally introduced to the source contact of conventional organic FETs for its improved saturation behavior, particularly for applications where high‐gain transistors are demanded and circuit speed or current is not that important, e.g., large‐area electronics and wearable electronics . Unlike traditional FETs, where saturation is solely dependent on the depletion region near the contact, for Schottky barrier FETs (also called source‐gated FET, SGT), the source‐depletion region formed by the Schottky barrier was also responsible for current saturation and enabled a lower voltage V D compared with regular transistors, as shown in Figure b . As demonstrated by Jiang et al, the output curve of a C8‐BTBT SGT remained almost identical with channel length L varying from 40 to 80 μm.…”

Section: Utilizations Of Nonideal Ofetsmentioning

confidence: 99%

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Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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Many advanced materials have been developed for organic field-effect transistors (OFETs) or thin-film transistors (TFTs) based on organic and organic hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that have strongly limited progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. In this review, the device physics of ideal and nonideal OFETs is discussed first to understand the factors that limit effective mobility in semiconducting channels, distort the potential distribution, or reduce the drift electric field. Then, recent advances in optimizing the material combinations, device structures, and fabrications of OFETs toward ideal transistors are discussed. Based on the good control of materials and interfaces, some new and novel concepts to utilize the nonideal properties of OFETs to build low-power circuits and integrated sensors are also discussed.

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Section: Utilizations Of Nonideal Ofetsmentioning

confidence: 94%

Section: Utilizations Of Nonideal Ofetsmentioning

confidence: 99%

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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“…Despite many efforts over the past decade to fabricate patterned large‐area OSC arrays, such as inkjet printing,24 contact evaporation printing,25 and capillary‐bridge lithography,26 these methods still involved photolithography to create the wetting/dewetting areas, or the contact template, which diminishes the advantages of the solution process. Furthermore, all‐solution‐processed small‐molecule OFETs have been used for logic gates and high‐speed circuits but there are some difficulties with respect to the control of crystallographic orientation, crystal uniformity, and thickness 27–29. To develop all‐solution‐processed organic electronic devices, while at the same time maintaining high‐performance and device uniformity, requires developing a solution‐based fabrication and patterning method that can produce highly aligned large‐area organic crystalline arrays with suitable and uniform thickness.…”

Section: Figurementioning

confidence: 99%

Solution‐Processed Centimeter‐Scale Highly Aligned Organic Crystalline Arrays for High‐Performance Organic Field‐Effect Transistors

et al. 2020

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Solution‐printed organic single‐crystalline films hold great potential for achieving low‐cost manufacturing of large‐area and flexible electronics. For practical applications, organic field‐effect transistor arrays must exhibit high performance and small device‐to‐device variation. However, scalable fabrication of highly aligned organic crystalline arrays is rather difficult due to the lack of control over the crystallographic orientation, crystal uniformity, and thickness. Here, a facile solution‐printing method to fabricate centimeter‐sized highly aligned organic crystalline arrays with a thickness of a few molecular layers is reported. In this study, the solution shearing technique is used to produce large‐area, organic highly crystalline thin films. Water‐soluble ink is printed on the hydrophobic surface of organic crystalline films, to selectively protect it, followed by etching. It is shown that the addition of a surfactant dramatically changes the fluid drying dynamics and increases the contact line friction of the aqueous solution to the underlying nonwetting organic crystalline film. As a result, centimeter‐scale highly aligned organic crystalline arrays are successfully prepared on different substrates. The devices based on organic crystalline arrays show good performance and uniformity. This study demonstrates that solution printing is close to industrial application and also expands its applicability to various printed flexible electronics.

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“…Therefore, the details regarding increasing the capacitance of the dielectrics will not be described herein. Another effective way is to reduce the D t , which comprises the defects in the organic semiconductor bulk and at the semiconductordielectric interface [79]. A steep SS can be achieved via the following approaches: (i) reducing the structural defects of organic semiconductors and (ii) improving the surface quality of dielectrics.…”

Section: Steep Subthreshold Slope For Reducing Power Consumptionmentioning

confidence: 99%

“…Jiang et al found that PVC can be used as the dielectric to provide a low trap density interface between the semiconductor and dielectric [87]. The dielectric was also utilized to fabricate a subthreshold Schottky barrier OFET (SB-OFET) through an inkjet-printed circuit technology [79]. The printed dielectric was free of dangling bonds and a smooth semiconductor-dielectric interface was formed.…”

Section: Schottky Barrier Ofet With a Steep Subthreshold Slopementioning

confidence: 99%

Low-power-consumption organic field-effect transistors

et al. 2020

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At present, the electrical performance of organic field-effect transistors (OFETs) has reached the level of commercial amorphous silicon. OFETs show considerable application potential in artificial intelligence, deep learning algorithms, and artificial skin sensors. The devices which can operate with high performance and low power consumption are needed for these applications. The recent energyrelated improvement to realize low-power consumption OFETs were reviewed, including minimizing operating voltage, reducing subthreshold swing, and decreasing contact resistance. In this review, we demonstrate breakthroughs in materials and methods to decrease power consumption, providing a promising avenue toward low-power consumption organic electronics. IntroductionFollowing the seminal paper from Tsumura, in which he demonstrated the first polythiophene-based field-effect transistor in 1986, organic field-effect transistors (OFETs) have received tremendous developments due to the intriguing properties of organic semiconductors, such as flexibility, stretchability, biocompatibility, solution processibility, and low cost [1][2][3][4]. To date, the field-effect mobility, which is the main character of an OFET device, has increased over 40 cm 2 V −1 s −1 . With the improvements in electric performance, the large-scale integration of OFETs have facilitated impressive application demonstrations, including organic light-emitting diode displays, radiofrequency identification tagging, and artificial skin [5][6][7][8][9][10][11][12]. To meet the future demand for product miniaturization and high properties, the number and density of transistors need to be increased, thus the heat energy caused by the power dissipation will lead to the degradation of organic materials and the life reduction of devices [13][14][15][16][17][18][19]. In addition, high power consumption limits the applications of most portable electronics which need an external battery [20][21][22][23]. All of these demands in applications require transistors to operate with extremely low-power consumption. However, power dissipation of most OFETs suffers from a high operating voltage typically a few tens of volts, which has a quadratic effect on dynamic power consumption [3,[24][25][26][27][28][29]. Furthermore, transistors sizes are also now approaching the point where quantum effects become appreciable, which can lead to an increased gate leakage current due to quantum tunneling and, in turn, an increased static power consumption.Achieving extremely energy-efficient OFETs is an essential prerequisite for commercial applications. After years of expansive development, significant advancements have been made in fabricating high quality dielectrics, thus reducing the operating voltage and leakage current. Furthermore, the subthreshold slope, which is negative correlation with switching efficiency, has witnessed a significant decrease driven by the process optimization and interface engineering [6,[30][31][32]. Additionally, the contact between semiconductors and electro...

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Printed subthreshold organic transistors operating at high gain and ultralow power

Cited by 216 publications

References 60 publications

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Solution‐Processed Centimeter‐Scale Highly Aligned Organic Crystalline Arrays for High‐Performance Organic Field‐Effect Transistors

Low-power-consumption organic field-effect transistors

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