Printed Low-Voltage Fuse Memory on Paper

Foldable and Disposable Memory on Paper

“…It is therefore essential to find an eco-friendly and biodegradable substrate. In contrast to plastics, paper easily decays without giving rise to environmental concerns and has therefore been recently exploited as a useful substrate for electronic devices202122, resulting in paper electronics. It has several advantages compared to silicon and plastic substrates, with low raw material cost being the foremost.…”

Printed low-voltage programmable write-once-read-many-memories

“…The writing voltage was switched on at 0.0 s. The 3 µm wide bits fuse at low current which is clearly below the current sourcing capacity of printed batteries that is ~30 mA. The writing times were observed to vary possibly due to the random progression rate of electromigration failure, as already noted in [7]. The 50 nm thick samples were successfully fused with 8 V writing voltage.…”

“…After the fusing has occurred, optical microscope images shown in Figure 4 reveal that the width of the bits has decreased near the breakpoint due to Ag nanoparticle grain growth [3,7]. For the 3 µm nominal width sample shown in Figure 4 (a), the width of the bit is ~2.3 µm outside the breakpoint area, whereas for the bit of 10 µm nominal width in Figure 4 (b), the width is ~9.1 µm further away from the breakpoint.…”

“…For the 3 µm nominal width sample shown in Figure 4 (a), the width of the bit is ~2.3 µm outside the breakpoint area, whereas for the bit of 10 µm nominal width in Figure 4 (b), the width is ~9.1 µm further away from the breakpoint. By utilizing the measured line width near the breakpoint, the critical current density required for the fusing of the bits can be estimated, as shown in [7], by plotting the fusing power per bit length as a function of bit resistivity times fusing current. Such a plot is shown in Figure 5 for bits of both thicknesses.…”

“…The critical current density of ~30 mA/µm 2 allows the breaking the printed Ag conductors with low writing currents when bits of µm 2 -range cross-section area are used on porous photopaper substrate. The low-voltage (~3 V) and lowcurrent (~30 mA) writing of the discussed fuse-type memory bits has been demonstrated with super-inkjetprinted bits and commercially available printed batteries [7]. The memories can be read both with contact and noncontact methods (via capacitive coupling) [8].…”