PREVAIL—Electron projection technology approach for next-generation lithography

Dhaliwal, Rajinder Singh; Enichen, W. A.; Golladay, S. D.; Gordon, Michael S.; Kendall, Rodney; Lieberman, J. E.; Pfeiffer, H. C.; Pinckney, D. J.; Robinson, Chris; Rockrohr, James Donald; Stickel, W.; Tressler, E. V.

doi:10.1147/rd.455.0615

Cited by 52 publications

(20 citation statements)

References 28 publications

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“…Surface nanopatterning can be achieved in a number of ways -e.g. ion and e-beam lithography [1], dip pen lithography using the tip of an atomic force microscope [2], localized excimer-laser irradiation [3] or by using the nearfield effects induced by laser irradiating microsphere-covered substrates in air [4] or in a liquid medium [5]. A layer of microspheres directly on the surface acts as an array of near-field lenses that focusses the incident radiation into a multitude of spots, thereby inducing formation of an organized array of nanostructures in a single step.…”

Section: Introductionmentioning

confidence: 99%

3-D patterning of silicon by laser-initiated, liquid-assisted colloidal (LILAC) lithography

Ulmeanu

Grubb

Jipa

et al. 2015

Journal of Colloid and Interface Science

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We report a comprehensive study of laser-initiated, liquid-assisted colloidal (LILAC) lithography, and illustrate its utility in patterning silicon substrates. The method combines single shot laser irradiation (frequency doubled Ti-sapphire laser, 50fs pulse duration, 400nm wavelength) and medium-tuned optical near-field effects around arrays of silica colloidal particles to achieve 3-D surface patterning of silicon. A monolayer (or multilayers) of hexagonal close packed silica colloidal particles act as a mask and offer a route to liquid-tuned optical near field enhancement effects. The resulting patterns are shown to depend on the difference in refractive index of the colloidal particles (ncolloid) and the liquid (nliquid) in which they are immersed. Two different topographies are demonstrated experimentally: (a) arrays of bumps, centred beneath the original colloidal particles, when using liquids with nliquidncolloid - and explained with the aid of complementary Mie scattering simulations. The LILAC lithography technique has potential for rapid, large area, organized 3-D patterning of silicon (and related) substrates.

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Section: Introductionmentioning

confidence: 99%

3-D patterning of silicon by laser-initiated, liquid-assisted colloidal (LILAC) lithography

Ulmeanu

Grubb

Jipa

et al. 2015

Journal of Colloid and Interface Science

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“…The TiN PVD sputter system (ULVAC SBH-3308 RDE system) was used to deposit 200-nm TiN film, and argon and nitrogen were used as process gases. For the film deposition by CVD method, the tool from Materials Research Corporation (MRC) was used to deposit TiN film by gas mixture of TiCl 4 and NH 3 at 630 -C. The chemical reaction is as follows:…”

Section: Methodsmentioning

confidence: 99%

“…In EBDW, the Gaussian beam has better resolution than shaped beam. But, the shaped beam has an at least 10-fold higher throughput than Gaussian beam due to imposing several pixels per shot [4]. In order to achieve the better resolution and high throughput for shaped beam technology, the utilization of thin resist film is inevitable [5].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, they claim that the negative chemically amplified resist incorporated with 3 wt.% C60 exhibits strong environmental stabilization in post-exposure delay. In the latter report [7], they find the resist sensitivity is degraded by the C60 due to the dissolution- 4 and Cl 2 plasmas, respectively. However, the use of 3-7.9 wt.% C60 in the resists and the deterioration of resist sensitivity elevate the fabrication cost and restrict the further application of this technology.…”

Section: Introductionmentioning

confidence: 99%

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Fullerene-incorporation for enhancing the electron beam resist performance for contact hole patterning and filling

You

Lei

2006

Thin Solid Films

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“…[14]. The pattern on the reticle is divided into small "cells" that are on the order of 1 pm is size to facilitate supporting struts for the thin stencil mask.…”

Section: Electron-projection Lithographymentioning

confidence: 99%

Two-dimensional spatial-phase-locked electron-beam lithography via sparse sampling

Hastings

Zhang

Finlayson

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The ability of electron-beam lithography (EBL) to create sub-10-nm features with arbitrary geometry makes it a critical tool in many important applications in nanoscale science and technology. The conventional EBL system is limited by its poor absolute-placement accuracy, often worse than its resolution. Spatial-phase-locked electron-beam lithography (SPLEBL) improves the placement accuracy of EBL tools to the nanometer level by directly referencing the beam position via a global-fiducial grid placed on the substrate, and providing feedback corrections to the beam position. SPLEBL has several different modes of operation, and it can be applied to both scanning electron-beam lithography (SEBL) and variable-shaped-beam lithography. This research focuses primarily on implementing real-time SPLEBL in SEBL systems.Real-time SPLEBL consists of three major components: a fiducial-reference grid, a beam-position detection algorithm and a partial-beam blanker. Several types of fiducial grids and their fabrication processes were developed and evaluated for their signal-to-noise ratio and ease of usage. An algorithm for detecting the beam position based on Fourier techniques was implemented, and -1 nm placement accuracy achieved. Finally, various approaches to partial-beam blanking were examined, and one based on an electrostatic quadrupole lens was shown to provide the best performance.

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PREVAIL—Electron projection technology approach for next-generation lithography

Cited by 52 publications

References 28 publications

3-D patterning of silicon by laser-initiated, liquid-assisted colloidal (LILAC) lithography

3-D patterning of silicon by laser-initiated, liquid-assisted colloidal (LILAC) lithography

Fullerene-incorporation for enhancing the electron beam resist performance for contact hole patterning and filling

Two-dimensional spatial-phase-locked electron-beam lithography via sparse sampling

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