Pressurizing Field-Effect Transistors of Few-Layer MoS₂ in a Diamond Anvil Cell

Abstract

Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. Herein, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS can all be significantly enhanced with pressure. We expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

“…The enhancing effect of the pressure on the conductance and the carrier concentration has been measured for few‐layer MoS 2 subjected to the high hydrostatic pressure, in the order of GPa, applied by means of diamond anvil cell . A clear change of the transport properties of a single crystal PdSe 2 from the semiconducting to the metal phase occurring without a structural phase transition under the application of a high pressure of 3 GPa has been observed .…”

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

“…The pressure is usually monitored using the ruby uorescence method, and a hydrostatic/uniaxial compression can be obtained in ultrathin TMDs by adding/not involving pressure transmitting medium in the pressure chamber of DAC. 30,42 Tuning physical properties of ultrathin TMDs via strain engineering…”

Tuning the Photoresponse of Nano‐Heterojunction: Pressure‐Induced Inverse Photoconductance in Functionalized WO3 Nanocuboids

“…On the other hand, external hydrostatic pressure ( P ) is an effective thermodynamic variable to alter the physical properties of materials by tuning their lattice parameters, including shortening the bond‐lengths and creating distortions in the nearest neighbor environment, electronic structures, and electron–phonon coupling mechanically. Recently, nanodevices inside a diamond‐anvil cell (DAC) with a few layers of MoS 2 showed synergy between the light and pressure (optomechanical), and pressure and field‐effect (mechano‐electrostatic) effects . Besides, the optomechanical evolution of trigonal selenium and iodine/bromide perovskites showed a reduction of photoconductivity with increasing pressure due to phase transformation and amorphization.…”