Pressure sensitive capacitance study in laser-induced chemical vapor deposition processed nanosized Si3N4

Abstract

Pressure sensitive capacitance of laser-induced chemical vapor deposition processed nanosized silicon nitride has been studied. It is found that the capacitance varies linearly with the pressure and its sensitivity is as high as 2.64 pf/Torr. The capacitance pressure sensitivity results from the huge interfaces and microvoids existing in the nanomaterials.