Pressure on charged domain walls and additional imprint mechanism in ferroelectrics

Mokrý, Pavel; Tagantsev, A. K.; Fousek, J.

doi:10.1103/physrevb.75.094110

Cited by 48 publications

(59 citation statements)

References 9 publications

(20 reference statements)

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“…After Mokrý et al, 14 who originally addressed this problem, we will use the following model. First, the internal structure of domain wall is neglected.…”

Section: Local Force Density On a Ferroelectric Domain Wallmentioning

confidence: 99%

“…Here, one can mention only a classical paper by Landauer 13 and a recent paper by Mokrý et al 14 Landauer indicated that the compensation of the bound charge on a wall will lead to a reduction of the pressure acting on it in the presence of a dc electric field, whereas Mokrý et al quantitatively described this effect in terms of Landau theory.…”

Section: Introductionmentioning

confidence: 99%

“…It is shown that not only the normal component of the force (treated in Ref. 14), but also the tangential one should be considered. In Sec.…”

Section: Introductionmentioning

confidence: 99%

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Ferroelectric charged domain walls in an applied electric field

Gureev

Mokrý²,

Tagantsev

et al. 2012

Phys. Rev. B

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The interaction of electric field with charged domain walls in ferroelectrics is theoretically addressed. A general expression for the force acting per unit area of a charged domain wall carrying free charge is derived. It is shown that, in proper ferroelectrics, the free charge carried by the wall is dependent on the size of the adjacent domains. As a result, the mobility of such domain wall (with respect to the applied field) is sensitive to the parameters of the domain pattern containing this wall. The problem of the force acting on a charged planar 180• domain wall normal to the polarization direction in a periodic domain pattern in a proper ferroelectric is analytically solved in terms of Landau theory. In small applied fields (in the linear regime), the force acting on the wall in such pattern increases with decreasing the wall spacing. It is shown that the domain pattern considered is unstable in a defect-free ferroelectric. The poling of a crystal containing such pattern, stabilized by the pinning pressure, is also considered. Except for a special situation, the presence of charge domain walls makes poling more difficult. The results obtained are also applicable to zigzag walls under the condition that the zigzag amplitude is much smaller than the sizes of the neighboring domains.

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“…After Mokrý et al, 14 who originally addressed this problem, we will use the following model. First, the internal structure of domain wall is neglected.…”

Section: Local Force Density On a Ferroelectric Domain Wallmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ferroelectric charged domain walls in an applied electric field

Gureev

Mokrý²,

Tagantsev

et al. 2012

Phys. Rev. B

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“…In his seminal paper, Landauer [ 53 ] points out that screening of the polarization bound charges on a domain wall leads to a reduction of its mobility. A detailed quantitative analysis of this problem was recently performed by Mokry et al [ 54 ] It has been shown that the Maxwell pressure acting from the applied fi eld to the wall is reduced with the progressive degree of screening and may even change sign. When a reverse domain grows in a fi lm of (conductive) BFO, the wall segments bearing bound charge will be progressively screened by free carriers.…”

Section: Role Of Remnant Domains In the Switching Processmentioning

confidence: 99%

Direct Observation of Capacitor Switching Using Planar Electrodes

Balke

Gajek

Tagantsev

et al. 2010

Adv Funct Materials

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Ferroelectric polarization switching in epitaxial (110) BiFeO3 films is studied using piezoresponse force microscopy of a model in‐plane capacitor structure. The electrode orientation is chosen such that only two active domain variants exist. Studies of the kinetics of domain evolution allows clear visualization of nucleation sites, as well as forward and lateral growth stages of domain formation. It is found that the location of the reverse‐domain nucleation is correlated with the direction of switching in a way that the polarization in the domains nucleated at an electrode is always directed away from it. The role of interface charge injection and surface screening charge on switching mechanisms is explored, and the nucleation is shown to be controllable by the bias history of the sample. Finally, the manipulation of domain nucleation through domain structure engineering is illustrated. These studies pave the way for the engineering and design of the ferroelectric device structures through control of individual steps of the switching process.

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“…Mokry et al [18] consider an infinitely thin inclined domain wall without any internal structure of the screening and bound charge distribution. Concrete calculations are performed for the case when both bound charges and screening charges (proportional to the bound ones) are localized directly at the domain wall plane, while the self-consistent calculation of the screening charge distribution across the wall was not performed.…”

Section: -Pmentioning

confidence: 99%

Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors

Eliseev

Morozovska²,

Svechnikov³

et al. 2011

Phys. Rev. B

232

201

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Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of charged domain walls with different incline angle with respect to spontaneous polarization vector in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the electron and holes density of states, which is valid at arbitrary distance from the domain wall.Due to the electrons accumulation, the static conductivity drastically increases at the inclined head-to-head wall by 1 order of magnitude for small incline angles θ~π/40 by up 3 orders of magnitude for the perpendicular domain wall (θ=π/2).There are space charge regions around the charged domain walls, but the quantitative characteristics of the regions (width and distribution of the carriers) appeared very different for the tail-to-tail and head-to-head walls in the considered donor doped ferroelectric semiconductor.The head-to-head wall is surrounded by the space charge layer with accumulated electrons and depleted donors of the same thickness (~40−100 correlation lengths). The tail-to-tail wall is surrounded by the thin space charge layer with accumulated holes of thickness ~5-10 correlation lengths and thick layer with accumulated donors of thickness ~100−200 correlation lengths, as well as the layer with depleted by electrons of thickness ~100−200 correlation lengths.* Corresponding author, e-mail: morozo@i.com.ua † Corresponding author, e-mail: vladimir.shur@usu.ru 2 The conductivity across the tail-to-tail wall is at least an order of magnitude smaller than the one of the head-to-head wall due to the low mobility of holes, which are improper carries.The results are in qualitative agreement with recent experimental data for LiNbO 3 doped with MgO.

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Pressure on charged domain walls and additional imprint mechanism in ferroelectrics

Cited by 48 publications

References 9 publications

Ferroelectric charged domain walls in an applied electric field

Ferroelectric charged domain walls in an applied electric field

Direct Observation of Capacitor Switching Using Planar Electrodes

Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors

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