Direct Observation of Capacitor Switching Using Planar Electrodes

Balke, Nina; Gajek, M.; Tagantsev, A. K.; Martin, Lane W.; Chu, Ying Hao; Ramesh, R.; Kalinin, Sergei V.

doi:10.1002/adfm.201000475

Cited by 87 publications

(93 citation statements)

References 55 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The asymmetry in the nucleation site and nucleation bias can be attributed to the built-in electric fields formed by Schottky junctions at the ferroelectric/electrode (semiconductor/metal) interfaces 25,26 , owing to the larger work functions of SRO and tungsten electrodes to the electron affinity of PZT 27,28 . The depletion of holes in p-type PZT near the electrodes (Fig.…”

Section: Discussionmentioning

confidence: 99%

Revealing the role of defects in ferroelectric switching with atomic resolution

et al. 2011

View full text Add to dashboard Cite

Ferroelectric materials are characterized by a spontaneous polarization, which can be reoriented with an applied electric field. The switching between polarized domains is mediated by nanoscale defects. understanding the role of defects in ferroelectric switching is critical for practical applications such as non-volatile memories. This is especially the case for ferroelectric nanostructures and thin films in which the entire switching volume is proximate to a defective surface. Here we report the nanoscale ferroelectric switching of a tetragonal PbZr 0.2 Ti 0.8 o 3 thin film under an applied electric field using in situ transmission electron microscopy. We found that the intrinsic electric fields formed at ferroelectric/electrode interfaces determine the nucleation sites and growth rates of ferroelectric domains and the orientation and mobility of domain walls, whereas dislocations exert a weak pinning force on domain wall motion.

show abstract

Section: Discussionmentioning

confidence: 99%

Revealing the role of defects in ferroelectric switching with atomic resolution

et al. 2011

View full text Add to dashboard Cite

show abstract

“…BaTiO 3 , PbTiO 3 , Pb(Zr,Ti)O 3 and BiFeO 3 , exhibit nucleation and growth of new domains with opposite polar vectors upon field reversal [13][14][15][16][17][18]. When they are in polycrystalline form, the ∞m macroscopic symmetry is presumably preserved during polarization reversal.…”

Section: B Electric Field-induced Ferroelectric To Relaxor Transitionmentioning

confidence: 99%

Disrupting long-range polar order with an electric field

et al. 2016

View full text Add to dashboard Cite

Electric fields are known to favor long-range polar order through the aligning of electric dipoles in relation to Coulomb's force. Therefore, it would be surprising to observe a disordered polar state induced from an ordered state by electric fields. Here we show such an unusual phenomenon in a polycrystalline oxide where electric fields induce a ferroelectric to relaxor phase transition. The non-ergodic relaxor phase with disordered dipoles appears as an intermediate state under electric fields during polarization reversal of the ferroelectric phase.Using the phenomenological theory, the underlying mechanism for this unexpected behavior can be attributed to the slow kinetics of the ferroelectric to relaxor phase transition, as well as its competition against domain switching during electric reversal. The demonstrated material could also serve as a model system to study the transient stages in first-order phase transitions; the slow kinetics does not require the use of sophisticated ultrafast tools.

show abstract

“…These distinct domain structures are established by the heteroepitaxial relationship between (001)-oriented epitaxial BFO thin films on (001) and (110) SrTiO 3 substrates 11,12 ; note that we used the pseudocubic cell notation for rhombohedral BFO thin films. While the (110) BFO shown in Figure 1a maintains a single-domain texture, the (100) BFO shown in Figure 1b exhibits striped domains lying along the o0104 direction with the two variants in the [110] and directions across the 711 or 1091 DWs.…”

Section: Methodsmentioning

confidence: 99%

Single ferroelectric-domain photovoltaic switch based on lateral BiFeO3 cells

Sung

Lee

et al. 2013

NPG Asia Mater

View full text Add to dashboard Cite

The bistability of ferroelectric polarization states serves as a basis for solid-state memory. This phenomenon can also yield an interesting photovoltaic effect in such a way that the directional photocarrier motion follows the inherent potential gradient imposed by the ferroelectric polarization vectors. Here, we demonstrate a single-domain photovoltaic switch based on lateral BiFeO 3 channels, in which such photovoltaic switching is achieved by a coherent single-domain reversal with a short electrical pulse. We then provide visual evidence for such operations with a series of spatially and spectrally resolved short-circuit photocurrent images. Specifically, we reveal that the sequential photovoltaic current images directly reflect the remanent polarization states of a single-domain channel. We also verify that, in multidomain channels, diffusive switching characteristics are determined not only by the internal polarization vector within the domain but also by oxygen vacancy accumulation at the domain walls. Keywords: ferroelectrics; multiferroics; oxide photonics; photovoltaics INTRODUCTIONHomogeneous light illumination on non-centrosymmetric crystals, such as ferroelectrics, in the intrinsic absorption range can give rise to an interesting photovoltaic effect, dubbed as the bulk photovoltaic effect. 1,2 This effect is distinct from that of typical semiconductor p-n junction photovoltaics and excitonic heterojunction photovoltaics in that the photogenerated carriers can be separated along the inherent polar directions, ensuing the unidirectional photocurrent (I ph ) and photovoltage (V ph ), associated with the spontaneous ferroelectric polarization vector (P s ). Therein, the open-circuit voltage (V oc ) is determined by the magnitude of the remanent polarization of ferroelectrics, and it can be additively as large as a few hundreds of volts, although the short-circuit current (I sc I ph at 0 V) is low due to the insulating character of the system. This phenomenon has been recently revisited with a small band-gap, BiFeO 3 (BFO) ferroelectric, from which a substantially higher photon-to-charge generation efficiency can be achieved in the visible range compared with that of other insulating ferroelectrics. [3][4][5][6][7][8] reported that diodelike rectification follows the polarization-dependent interface bandbending of BFO single-crystal slabs that are electrically switchable, that is, V oc and I sc are defined by the remanent polarization directions. In general, the spatial extent of spontaneous polarization vectors in ferroelectric crystals is typically manifested as domains (typically spanning over a few mm in size) and domain walls (DW, 1-2 nm in

show abstract

Direct Observation of Capacitor Switching Using Planar Electrodes

Cited by 87 publications

References 55 publications

Revealing the role of defects in ferroelectric switching with atomic resolution

Revealing the role of defects in ferroelectric switching with atomic resolution

Disrupting long-range polar order with an electric field

Single ferroelectric-domain photovoltaic switch based on lateral BiFeO3 cells

Contact Info

Product

Resources

About