Pressure-induced symmetry breaking in tetragonal CsAuI<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>

Wang, Shibing; Hirai, Shigeto; Shapiro, M. C.; Riggs, Scott; Mao, Wendy L.; Fisher, I. R.

doi:10.1103/physrevb.87.054104

Cited by 17 publications

(13 citation statements)

References 21 publications

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“…We find this high pressure semiconducting state to be remarkably robust, with almost no further change up to a pressure of p = 38 GPa. Both the occurrence of the electronic anomalies and the reopening of a gap are in good agreement with earlier pressure resistivity, infrared, and Raman spectroscopy measurements on CsAuI 3 [13,18]. CsAuBr 3 is not found to become superconducting for any of the pressures, despite the very low resistivities and high conductivities observed.…”

Section: Resultssupporting

confidence: 88%

“…The three-dimensional metal-halogen frameworks in CsAuX 3 are formed by elongated octahedra with Au(III) as the central atom and compressed octahedra around Au(I); therefore, the chemical formula of these compounds is sometimes written as Cs 2 Au 2 X 6 , emphasizing the different nature of the two gold centers. The members of the CsAuX 3 mixed-valence perovskites undergo pressure-induced structural phase transitions at p ≈ 11, 9, and 5 GPa, respectively [11,18,19]. These transitions are associated with a transition from the mixed valency Au(I)/Au(III) to a single valent material with Au(II) at the center of the octahedra [13,20].…”

Section: Introductionmentioning

confidence: 99%

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Large resistivity reduction in mixed-valent CsAuBr3 under pressure

Naumov

Huangfu

et al. 2019

Phys. Rev. B

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We report on high-pressure p ≤ 45 GPa resistivity measurements on the perovskite-related mixedvalent compound CsAuBr 3 . The compounds high-pressure resistivity can be classified into three regions: For low pressures (p < 10 GPa) an insulator to metal transition is observed; between p = 10 GPa and 14 GPa the room temperature resistivity goes through a minimum and increases again; above p = 14 GPa a semiconducting state is observed. From this pressure up to the highest pressure of p = 45 GPa reached in this experiment, the room-temperature resistivity remains nearly constant. We find an extremely large resistivity reduction between ambient pressure and 10 GPa by more than 6 orders of magnitude. This decrease is among the largest reported changes in the resistivity for this narrow pressure regime. We show -by an analysis of the electronic band structure evolution of this material -that the large change in resistivity under pressure in not caused by a crossing of the bands at the Fermi level. We find that it instead stems from two bands that are pinned at the Fermi level and that are moving towards one another as a consequence of the mixed-valent to single-valent transition. This mechanism appears to be especially effective for the rapid buildup of the density of states at the Fermi level. arXiv:1909.06874v1 [cond-mat.mtrl-sci]

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Large resistivity reduction in mixed-valent CsAuBr3 under pressure

Naumov

Huangfu

et al. 2019

Phys. Rev. B

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“…A few charge-ordered materials have also been explored in halide perovskites, such as Au + /Au 3+ , and Tl + /Tl 3+ -based compounds. CsAuX 3 (X = Cl, Br, I) was demonstrated to show both structural and semiconductor-metal transition at high pressures (21)(22)(23)(24). Tl-based compounds (CsTlF 3…”

Section: Introductionmentioning

confidence: 99%

Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite

Lin

Chen

Gao

et al. 2019

Proc. Natl. Acad. Sci. U.S.A.

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Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In+/In3+) inorganic halide perovskite with the composition of Cs2In(I)In(III)Cl6 in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space group I4/m with a = 17.2604(12) Å, c = 11.0113(16) Å if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications.

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“…These double perovskites include materials such as CsTlX 3 and CsAuX 3 (even though the latter has strongly distorted octahedra). 23 , 24 Finally, a small group of fluoride ordered perovskites crystallize in the A 3 BX 6 cryolite (Na 3 AlF 6 ) phase, where half of the B sites are occupied by the same cations that occupy the A sites (that is, the formula is the same as that of an ordered perovskite when it is written as A 2 ABX 6 ). 5 While the ordering of cations in HPs occurs only with B site cations, oxide perovskites can also form quadruple perovskites when both the A and B sites are occupied by two differently charged cations: these materials are generally described as having an AA′BB′O 6 formula, like KSrXeNaO 6 , but the CaCu 3 Fe 2 Re 2 O 12 compound also falls under this scheme.…”

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confidence: 99%