Pressure-induced structural and semiconductor-semiconductor transitions in Co0.5Mg0.5Cr

Pressure-induced metallization in MoSe2 under different pressure conditions

“…The temperature-dependent electrical conductivity measurements were performed in the temperature range from 120 K to 300 K. Similar to the experimental technique by Rahman et al, the in situ high-pressure electrical resistivity experiment is valid up to 55 GPa in the diamond anvil cell. 17 More detailed descriptions on the experimental procedures and measurement methods have been reported previously. [18][19][20] Some microscopical observations on the recovered samples were performed at room temperature and high pressure conditions by virtue of the cross-sectional selected-area highresolution transmission electron and atomic force microscopy.…”

Pressure-driven thermoelectric properties of defect chalcopyrite structured ZnGa2Te4:ab initiostudy

“…The Wyckoff positions for both the structures and a strong discrepancy in its ground state structure were discussed in the previous report. 35 In order to understand the case, Birch–Murnaghan equation of states (BM-EOS) 36 fit have been done and displayed in Fig. 1(c) .…”

Pressure-induced structural and electronic transitions of thiospinel Fe3S4

“…The stabilization of these diverse polymorphs can lead to many interesting high pressure properties such as semiconductor-semiconductor transition, insulator-metal transition, Mott transition and superconductivity (e.g. [20][21][22][23]). Magnetite, which is the most studied compound among the inverse spinel systems, has been shown to possess several novel high pressure properties, such as suppression of Verwey transition under pressure [24], inverse-normal spinel transition [25,26] and high spin to intermediate spin transition [27], among others.…”