Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells

Shan, Wei; Fang, Xiang; Li, Didi; Jiang, Shan; Shen, S. C.; Hou, Hongwei; Wu, Feng; Zhou, Jian

doi:10.1063/1.103670

Cited by 17 publications

(3 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is in excellent agreement with results of Ref. [7] but substantially higher than the values reported in Refs. [1] and [3].…”

Section: Discussionsupporting

confidence: 78%

“…[1] and [3] were fitted with a straight line while we clearly see a sublinear behaviour, similarly to Ref. [7]. Our values seem to contradict the strong indium-composition dependence of the pressure coefficient proposed in Ref.…”

Section: Discussioncontrasting

confidence: 51%

“…It has to be stressed, though, that our results (as well as those of Ref. [7]) were obtained at 300 K while the luminescence data from Refs. [1] and [3] were obtained at 80 K and at 20 K.…”

Section: Discussioncontrasting

confidence: 37%

See 2 more Smart Citations

Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

et al. 1993

View full text Add to dashboard Cite

The interband absorption of strained InGaAs/GaAs multiple quantum well was studied at room temperature for pressures up to 5.5 GPa. Three absorption lines were attributed to the excitonic transitions hhl-el, lie and hh2-e2. They were visible until pressure of about 5 GPa which is above the Γ-Χ crossover for this system. Pressure coefficients of the observed lines were compared with the literature data. The origin of broadening of the lines above Γ-Χ crossover is discussed.

show abstract

“…This is in excellent agreement with results of Ref. [7] but substantially higher than the values reported in Refs. [1] and [3].…”

Section: Discussionsupporting

confidence: 78%

Section: Discussioncontrasting

confidence: 51%

See 1 more Smart Citation

Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

et al. 1993

View full text Add to dashboard Cite

show abstract

Theory of the Anomalous Low Band-Gap Pressure Coefficients of Semiconductor Strained Layers

Downes

Uden

Bosher

et al. 2001

phys. stat. sol. (b)

View full text Add to dashboard Cite

Pressure Dependence of the Electronic Subband Structure of Strained In_0.2Ga_0.8As/GaAs MQWs

Goñi

Syassen

et al. 1996

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

We have measured low-temperature photoluminescence (PL) and optical absorption spectra of an Ino,zG~.8As/GaAs multiple quantum well (MQW) structure at pressures up to 8 GPa. Below 4.9 GPa, PL shows only the emission of the n = 1 heavy-hole (HH) exciton. Three new X-related PL bands appear at higher pressures. They are assigned to spatially indirect (type-11) and direct (type-I) transitions from Xz states in GaAs and X X~ valleys of InGaAs, respectively, to the HH subband of the wells. From the PL data we obtain a valence band offset of 80 meV for the strained Ino.zG% &s/GaAs MQW system. Absorption spectra show three features corresponding to direct exciton transitions in the quantum wells. In the pressure range of 4.5 to 5.5 GPa an additional pronounced feature is apparent in absorption, which is attributed to the pseudo-direct transition between a HH subband and the folded Xz states of the wells. This gives the first clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance at the heterointerfaces in MQWs.

show abstract

Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells

Cited by 17 publications

References 23 publications

Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

Theory of the Anomalous Low Band-Gap Pressure Coefficients of Semiconductor Strained Layers

Pressure Dependence of the Electronic Subband Structure of Strained In_0.2Ga_0.8As/GaAs MQWs

Contact Info

Product

Resources

About

Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells

Cited by 17 publications

References 23 publications

Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

Theory of the Anomalous Low Band-Gap Pressure Coefficients of Semiconductor Strained Layers

Pressure Dependence of the Electronic Subband Structure of Strained In0.2Ga0.8As/GaAs MQWs

Contact Info

Product

Resources

About

Pressure Dependence of the Electronic Subband Structure of Strained In_0.2Ga_0.8As/GaAs MQWs