Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

Abstract

The interband absorption of strained InGaAs/GaAs multiple quantum well was studied at room temperature for pressures up to 5.5 GPa. Three absorption lines were attributed to the excitonic transitions hhl-el, lie and hh2-e2. They were visible until pressure of about 5 GPa which is above the Γ-Χ crossover for this system. Pressure coefficients of the observed lines were compared with the literature data. The origin of broadening of the lines above Γ-Χ crossover is discussed.

New Ideas in Semiconductor Pressure Sensors

“…We have also studied the properties of InGaAs/ GaAs strained quantum wells [9]. In this system the quantum well transitions occur at energies below the GaAs substrate band-edge so that the absorption can be measured without the need to remove the substrate.…”