Pressure and Temperature Dependence of the Static Dielectric Constants and Raman Spectra of Ti<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>(Rutile)

Samara, G. A.; Peercy, P. S.

doi:10.1103/physrevb.7.1131

Cited by 248 publications

(142 citation statements)

References 52 publications

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“…We note that usually LO modes and ⑀ ϱ are assumed as temperature independent. 21,23 Figure 4 summarizes the qualitative agreement between ͑b͒ temperature dependence of the dielectric constant and ͑c͒ the inverse of the phonon frequency. Remarkably, the measured changes in the dielectric constant correspond very well to a decrease in the phonon frequency as described by the LST equation.…”

Section: Resultsmentioning

confidence: 99%

Magnetodielectric and magnetoelastic coupling inTbFe3(BO3)4

et al. 2010

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We have studied the magnetodielectric and magnetoelastic coupling in TbFe 3 ͑BO 3 ͒ 4 single crystals by means of capacitance, magnetostriction, and Raman spectroscopy measurements. The data reveal strong magnetic field effects on the dielectric constant and on the macroscopic sample length which are associated to long-range magnetic ordering and a field-driven metamagnetic transition. We discuss the coupling of the dielectric, structural, and magnetic order parameters and attribute the origin of the magnetodielectric coupling to phonon mode shifts according to the Lyddane-Sachs-Teller relation.

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Section: Resultsmentioning

confidence: 99%

Magnetodielectric and magnetoelastic coupling inTbFe3(BO3)4

et al. 2010

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“…7 However, both of these results are significantly smaller than the bulk value reported for crystalline TiO 2 ͑ϳ90͒. 14 Insights into the reduction of ⑀ 1 ͑0͒ in films compared to that of bulk crystals and into its field-induced modification are provided by the Lyddane-Sachs-Teller ͑LST͒ relation 17…”

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confidence: 79%

An infrared probe of tunable dielectrics in metal-oxide-semiconductor structures

Wang

Mikolaitis

et al. 2005

Applied Physics Letters

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A composite metal-polymer electrode is designed to investigate electric-field-induced changes of the dielectric function of gate insulators in metal-oxide-semiconductor structures using infrared spectroscopy. We studied structures based on TiO2 dielectric insulator on doped silicon, a combination commonly used in field-effect transistors. It is shown that the voltage-induced changes of the dielectric constant in TiO2 originate from a modification of the lattice vibration modes of this compound.

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“…All of the bulk crystalline forms of TiO2 are centrosymmetric. However, Samara et al have described rutile-phase TiO2 as an incipient ferroelectric [25] and, as noted above, Grünebohm et al [18] have discussed the theoretical possibility of ferroelectricity in rutile under certain strain conditions. Recent work on amorphous TiO2 thin films by Kim et al [26] showed that PFM hysteresis loops and poling can be observed due to electrochemicallyinduced strain instead of a normal electromechanical piezoresponse.…”

Section: Submitted Tomentioning

confidence: 99%

Interesting Evidence for Template‐Induced Ferroelectric Behavior in Ultra‐Thin Titanium Dioxide Films Grown on (110) Neodymium Gallium Oxide Substrates

Deepak

Miguel

Keeney

et al. 2014

Adv Funct Materials

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This paper reports the first-ever presentation of evidence for room-temperature ferroelectric behavior in anatase-phase titanium dioxide (a-TiO2). It is shown that behaviour strongly indicative of ferroelectric behavior is induced in ultra-thin (20nm to 80nm) biaxially-strained epitaxial films of a-TiO2 deposited by liquid injection chemical vapour deposition onto (110) Submitted to neodymium gallium oxide (NGO) substrates. The structural properties of the films were analyzed by x-ray diffraction and high-resolution transmission electron microscopy, which showed significant orthorhombic strain in films. Possible ferroelectric behavior was probed by piezoresponse force microscopy (PFM). The films on NGO showed a switchable dielectric spontaneous polarization, the ability to retain polarization information written into the film using the PFM tip for extended periods (several hours) and at elevated temperatures (up to 100°C) without significant loss, and the disappearance of the polarization at a temperature between 180 and 200°C, indicative of a Curie temperature within this range. This combination of effects is believed to constitute strong experimental evidence for ferroelectric behavior, which has not hitherto been reported in a-TiO2 and opens up the possibility for a range of new devices and materials applications. A model is presented for the effects of large in-plane strains on the crystal structure of anatase which provides a possible explanation for the experimental observations.

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Pressure and Temperature Dependence of the Static Dielectric Constants and Raman Spectra of TiO2(Rutile)

Cited by 248 publications

References 52 publications

Magnetodielectric and magnetoelastic coupling inTbFe3(BO3)4

Magnetodielectric and magnetoelastic coupling inTbFe3(BO3)4

An infrared probe of tunable dielectrics in metal-oxide-semiconductor structures

Interesting Evidence for Template‐Induced Ferroelectric Behavior in Ultra‐Thin Titanium Dioxide Films Grown on (110) Neodymium Gallium Oxide Substrates

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