Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer

Perlin, P.; Subramanya, Sudhir G.; Mars, D. E.; Krüger, Joachim; Shapiro, Noad A.; Siegle, H.; Weber, E. R.

doi:10.1063/1.122869

Cited by 69 publications

(38 citation statements)

References 10 publications

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“…For example, the pressure induced shift of the GaAs band gap is larger than that of the QW states. This is in concordance with results on bulk Ga 0.92 In 0.08 N 0.015 As 0.985 where also a significantly reduced pressure coefficient was found [23]. Furthermore, the higher the QW transition (i.e.…”

Section: Introductionsupporting

confidence: 91%

Hydrostatic pressure experiments on dilute nitride alloys

Klar¹,

Teubert²,

Niebling³

et al. 2006

Physica Status Solidi (b)

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GaN(x)As(1-x) and Ga(1-y)In(y)N(x)As(1-x) are the most prominent members of a novel class of non-amalgamation type semiconductor alloys where a fraction x of the anions of the host (e.g., GaAs or Ga(1-y)In(y)As) is replaced by N isovalent impurity atoms. The localized N-states in GaN(x)As(1-x) and Ga(1-y)In(y)As(1-x) form a series of discrete energy levels (e.g., isolated N-state, N-pairs and higher order N-cluster states) resonant with the conduction band of the host. The effect of the alloying with nitrogen on the bandstructure of GaN(x)As(1-x) and Ga(1-y)In(y)N(x)As(1-x) can be well parameterized using a band-anticrossing (BAC) model, namely, assuming a level repulsion between an effective N-state and the conduction band-edge state. The dependence of several physical properties on nitrogen incorporation can be predicted qualitatively in the framework of this model, e.g., a tremendous increase of the electron effective mass in GaN(x)As(x) with increasing x, a huge cross section for scattering of electrons by N impurities in electronic transport, etc. Most of these predictions can be tested and verified by performing hydrostatic pressure experiments which, within the picture of the BAC model, allow one to tune continuously the energy difference between the host-like conduction band edge and the effective N-level within one and the same specimen. Several examples of this kind will be discussed. Furthermore, we will demonstrate the limitations of the BAC model in the case of GaN(x)P(1-x) and also of GaN(x)As(1-x). In particular, we will show several examples where the description by a single effective N-state fails and that the multiplicity of the N-states needs to be taken into account. Again hydrostatic pressure experiments prove to be a useful and suitable tool for revealing the effects due to N-cluster states. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Section: Introductionsupporting

confidence: 91%

Hydrostatic pressure experiments on dilute nitride alloys

Klar¹,

Teubert²,

Niebling³

et al. 2006

Physica Status Solidi (b)

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“…9 The temperature, induced shift of the absorption edge in GaAsN was reduced by 40% compared with that of GaAs in this work, while it was reduced by only 12% in GaInNAs with the N concentration of 1.5%. 3 This may be due to the lowering of the band-like GaInAs state energy by the inclusion of In. This will shift the cross-over temperature discussed in Fig.…”

mentioning

confidence: 99%

“…Perlin et al 3 recently studied the pressure and temperature dependence of the absorption edge of a Ga 0.92 In 0.08 N 0.015 As 0.985 alloy. They reported that the hydrostatic pressure coefficient of the band gap of the GaInNAs was more than a factor of 2 lower than that of GaAs.…”

mentioning

confidence: 99%

Temperature dependence of band gap energies of GaAsN alloys

Uesugi

Suemune

Hasegawa

et al. 2000

Applied Physics Letters

110

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The temperature dependence of band gap energies of GaAsN alloys was studied with absorption measurements. As the N concentration in GaAsN increased, the temperature dependence of the band gap energy was clearly reduced in comparison with that of GaAs. The redshift of the absorption edge in GaAsN for the temperature increase from 25 to 297 K was reduced to 60% of that of GaAs for the N concentration larger than ϳ1%. The differential temperature coefficient of the energy gap at room temperature was also reduced to 70% of that of GaAs. The main factor for this reduced temperature dependence in GaAsN was attributed to the transition from band-like states to nitrogen-related localized states with detailed studies of the temperature-induced shift of the absorption edge. © 2000 American Institute of Physics. ͓S0003-6951͑00͒04110-3͔ III-V-N alloys such as GaAsN and GaInNAs have been intensively studied to realize long-wavelength semiconductor lasers with higher temperature stability for optical-fiber communications.1 Although 1.3 m semiconductor lasers based on the InGaAsP/InP system have been commonly used, their lasing threshold currents are highly temperature dependent due to poor carrier confinements in InGaAsP quantum wells. GaInNAs/AlGaAs system grown on GaAs substrates will be able to confine electrons more tightly in the quantum wells due to the larger conduction bands offsets compared with the InGaAsP system, which will efficiently prevent leakage currents and will reduce the temperature dependence of the threshold currents.1 The higher temperature stability of the lasing threshold was demonstrated in a GaInNAs laser operating at around 1.3 m. 2In addition to the stability of the lasing threshold against the environment change, the stability of the lasing wavelength is another important requirement on laser light sources for optical-fiber communications. Perlin et al.3 recently studied the pressure and temperature dependence of the absorption edge of a Ga 0.92 In 0.08 N 0.015 As 0.985 alloy. They reported that the hydrostatic pressure coefficient of the band gap of the GaInNAs was more than a factor of 2 lower than that of GaAs. The temperature-induced shift of the absorption edge of GaInNAs was 12% smaller than that of GaAs. They explained this phenomenon by the large decrease of the deformation potential.In this letter, the relation between the temperature dependence of the band gap energy of the GaAsN alloys and their N concentration is studied. A substantial decrease of the temperature dependence was found in GaAsN, and the transition from the temperature dependence of GaAs band-like states to that of more localized states was observed for the higher N concentrations.0.1-6.2-m-thick GaAsN films were grown on semiinsulating GaAs͑001͒ substrates by metalorganic molecularbeam epitaxy. The metalorganic precursors used were triethylgallium, monomethylhydrazine, and trisdimethylaminoarsenic ͑TDMAAs͒. After thermal cleaning of GaAs substrate surfaces at 600°C with the simultaneous supply of TDMAAs, GaAsN layers we...

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“…This result suggests that the temperature-induced band gap shift changes from that of GaAs to the one of nitrogen-related states [19][20][21][22]. The third feature of these photocurrent spectra is that with decreasing measurement temperature, the dominant band edge transition peaks shift to the short-wavelength side.…”

Section: Energy Band Gap (Ev)mentioning

confidence: 94%