Hydrostatic pressure experiments on dilute nitride alloys

Abstract

GaN(x)As(1-x) and Ga(1-y)In(y)N(x)As(1-x) are the most prominent members of a novel class of non-amalgamation type semiconductor alloys where a fraction x of the anions of the host (e.g., GaAs or Ga(1-y)In(y)As) is replaced by N isovalent impurity atoms. The localized N-states in GaN(x)As(1-x) and Ga(1-y)In(y)As(1-x) form a series of discrete energy levels (e.g., isolated N-state, N-pairs and higher order N-cluster states) resonant with the conduction band of the host. The effect of the alloying with nitrogen on the bandstructure of GaN(x)As(1-x) and Ga(1-y)In(y)N(x)As(1-x) can be well parameterized using a band-anticrossing (BAC) model, namely, assuming a level repulsion between an effective N-state and the conduction band-edge state. The dependence of several physical properties on nitrogen incorporation can be predicted qualitatively in the framework of this model, e.g., a tremendous increase of the electron effective mass in GaN(x)As(x) with increasing x, a huge cross section for scattering of electrons by N impurities in electronic transport, etc. Most of these predictions can be tested and verified by performing hydrostatic pressure experiments which, within the picture of the BAC model, allow one to tune continuously the energy difference between the host-like conduction band edge and the effective N-level within one and the same specimen. Several examples of this kind will be discussed. Furthermore, we will demonstrate the limitations of the BAC model in the case of GaN(x)P(1-x) and also of GaN(x)As(1-x). In particular, we will show several examples where the description by a single effective N-state fails and that the multiplicity of the N-states needs to be taken into account. Again hydrostatic pressure experiments prove to be a useful and suitable tool for revealing the effects due to N-cluster states. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

“…The crossing occurs close (within the simulation uncertainty) to the maximum of the γ-X splitting at ∼1% strain, and the abrupt change in the slope of the γ–X splitting might be caused by repulsion between the X-state and the band edge close to the crossing point. The phenomenon of level repulsion between a localized state and the band edge has been shown to account for the changes in bandstructure observed in pressure experiments on nitrogen-doped III–V materials . With increasing strain, the X-line is pushed away from the Γ 8c band edge, while the γ-line seems unaffected, thus increasing the γ–X energy separation until the crossing point is reached close to 1% strain.…”

“…The phenomenon of level repulsion between a localized state and the band edge has been shown to account for the changes in bandstructure observed in pressure experiments on nitrogen-doped III−V materials. 43 With increasing strain, the X-line is pushed away from the Γ 8c band edge, while the γ-line seems unaffected, thus increasing the γ−X energy separation until the crossing point is reached close to 1% strain. Beyond 1%, repulsion of the X-line from the band edge again decreases the γ−X splitting.…”