Single impurity Anderson model and band anti‐crossing in the Ga1–xInx Ny As1–y material system

Vogiatzis, N; Rorison, Judy M

doi:10.1002/pssa.200723289

Cited by 8 publications

(13 citation statements)

References 24 publications

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“…In practice, the V kj may be assumed to have a weak k dependence and taken to be constant. The Green's function for the perturbed j states is $G_{{\bf j}} = [E{-} E_{{\bf j}} + i\Delta _{{\bf j}} ]^{{-} 1} $ 20, where the real part of the energy shift has been absorbed into E j .…”

Section: Theorymentioning

confidence: 99%

Modelling and direct measurement of the density of states in GaAsN

Vaughan¹,

Fahy²,

O’Reilly³

et al. 2011

Physica Status Solidi (b)

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The density of states for a GaAsN sample with a nitrogen concentration of x = 1.2% is determined experimentally via scanning tunnelling spectroscopy. These data are modelled using the linear combination of isolated nitrogen states (LCINS) model within a Greens function framework. Extrinsic thermal and modulation broadening effects due to the measurement process are also incorporated. Excellent agreement to the experimental data is obtained without arbitrary fitting parameters, providing confirmation of the influence of isolated N and N–N pair states on the conduction band dispersion of GaAsN.

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Section: Theorymentioning

confidence: 99%

Modelling and direct measurement of the density of states in GaAsN

Vaughan¹,

Fahy²,

O’Reilly³

et al. 2011

Physica Status Solidi (b)

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“…The existence of these states entails an enhancement of the spectral function, and corresponds to bound and resonance states generated by the coupling of the semi-infinite leads and the central region. We note that a similar distinction between bound and resonance states can be made within the single impurity Anderson model [32,33]. The analysis of bound versus resonance states can also be based on the assessment of the poles of the spectral function, Equation (12).…”

Section: Non-interacting Central Layermentioning

confidence: 89%

Spin-polarization and resonant states in electronic conduction through a correlated magnetic layer

Weh,

Appelt,

Östlin

et al. 2021

Preprint

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The transmission through a magnetic layer of correlated electrons sandwiched between non-interacting normal-metal leads is studied within model calculations. We consider the linear regime in the framework of the Meir-Wingreen formalism, according to which the transmission can be interpreted as the overlap of the spectral function of the surface layer of the leads with that of the central region. By analyzing these spectral functions, we show that a change of the coupling parameter between the leads and the central region significantly and non-trivially affects the conductance. The role of band structure effects for the transmission is clarified. For a strong coupling between the leads and the central layer, high-intensity localized states are formed outside the overlapping bands, while for weaker coupling this high-intensity spectral weight is formed within the leads' continuum band around the Fermi energy. A local Coulomb interaction in the central region modifies the high-intensity states, and hence the transmission. For the present setup, the major effect of the local interaction consists in shifts of the band structure, since any sharp features are weakened due to the macroscopic extension of the configuration in the directions perpendicular to the transport direction.

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“…Based on our previous extension of the Sugawara QD gain model [13] for a GaInNAs QD laser, we further develop the GaInNAs QD gain (gain Q D (z, T z , hω m ; j )) for a SOA obtained from the imaginary part of the complex optical susceptibility (χ σ (z, T z , ω m ; j )) [15], as shown in (11) and (12). The gain used is first order in the expansion with the field.…”

Section: The Modelmentioning

confidence: 99%

“…Gain Models 1) QW Gain: The GaInNAs/GaAs QW material gain, gain QW (z, T z , hω(QW)), used in (1) is derived using a QW BAC model [12] using Fermi's Golden Rule as given in (8) and then broadened using a Lorenzian function L hom to produce the gain expression given in (7). The maximum of the QW is at the energy corresponding to the (e1-hh1) transition.…”

Section: The Modelmentioning

confidence: 99%

“…In the model, the QD-like fluctuations are included in the GaInNAs QW SOA which allows us to consider broadband gain resulting from the broadened gain of the QW level [12] and broad gain arising from the inhomogeneous array of QDlike fluctuations [13]. These QD fluctuations have previously been included in the model for dilute nitride QW lasers where these fluctuations have been observed to increase the lasing threshold [13].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Theoretical Study on Dilute Nitride 1.3 $\mu{\rm m}$ Quantum Well Semiconductor Optical Amplifiers: Incorporation of N Compositional Fluctuations

Sun

Vogiatzis

Rorison

2013

IEEE J. Quantum Electron.

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Analysis of the broadband gain of a GaInNAs single quantum well (QW) semiconductor optical amplifier (SOA) is developed considering the tuneability of the gain in detail. The SOA is analyzed as a single device multiwavelength channel amplifier in a wavelength-division-multiplexing (WDM) network. The gain model includes the QW material gain derived using a band anti-crossing model and includes quantum dot (QD) fluctuations in the conduction band arising from compositional fluctuations of N within the QW. The material gain is broadened by adding the gain of the QD-like fluctuations and the QW confined level. Simultaneous amplification of two optical signals is analyzed, one at the peak of the QW gain and one at the peak of the QD distribution gain, and the linear and nonlinear regions are established. In addition, multi-channel signal amplification, appropriate for WDM applications, has been modeled across the frequency range of the QW and the QD-like fluctuations and no wavelength degradation between the channels was observed demonstrating the potential of dilute nitride QW as multiwavelength SOAs at optical communications wavelengths.

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Single impurity Anderson model and band anti‐crossing in the Ga_1–xIn_x N_y As_1–y material system

Cited by 8 publications

References 24 publications

Modelling and direct measurement of the density of states in GaAsN

Modelling and direct measurement of the density of states in GaAsN

Spin-polarization and resonant states in electronic conduction through a correlated magnetic layer

Theoretical Study on Dilute Nitride 1.3 $\mu{\rm m}$ Quantum Well Semiconductor Optical Amplifiers: Incorporation of N Compositional Fluctuations

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