Abstract:First principles calculations are performed to explore the effect of applied vertical press on the electronic structure of monolayer MoS 2 . It is demonstrated that MoS 2 monolayer exhibits significant modulation of its band gap and band edges by the applied vertical press. Monolayer MoS 2 homojunction with type-I band alignment can be formed by applying vertical press partially on the MoS 2 monolayer. The effect of the vertical press on the electronic structure of MoS 2 monolayer homojunction can be significa… Show more
To solve the tough problem of momentum-mismatch in heterojunctions, we propose a universal approach to obtain type II band alignment in two-dimensional semiconductor homojunctions with wide range momentum-space-match by band-nesting effect.
To solve the tough problem of momentum-mismatch in heterojunctions, we propose a universal approach to obtain type II band alignment in two-dimensional semiconductor homojunctions with wide range momentum-space-match by band-nesting effect.
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