An interesting in-plane anisotropic layered dimetal chalcogenide TaNiS is introduced, and the optical and electrical properties with respect to its in-plane anisotropy are systematically studied. The Raman vibration modes have been identified by Raman spectra measurements combined with calculations of phonon-related properties. Importantly, the TaNiS flakes exhibit strong anisotropic Raman response under the angle-resolved polarized Raman spectroscopy measurements. We found that Raman intensities of the A mode not only depend on rotation angle but are also related to the sample thickness. In contrast, the infrared absorption with light polarized along the a axis direction is always larger than that in the c axis direction regardless of thickness under the polarization-resolved infrared spectroscopy measurements. Remarkably, the first-principles calculations combined with angle-resolved conductance measurements indicate strong anisotropic conductivity of TaNiS. Our results not only prove TaNiS is a promising in-plane anisotropic 2D material but also provide an interesting platform for future functionalized electronic devices.

The fast development of high-performance devices for diverse applications requires nanoscale materials with multifunctional properties, motivating theoretical exploration into novel two-dimensional (2D) materials. In this work, we propose a new family of 2D nanomaterials, Janus transition metal oxides and chalcogenides MXY (M = Ti, Zr, or Hf; X = S or Se; Y = O or S; X ≠ Y) monolayers, for their versatile applications. We find that the Janus MXY monolayers are semiconductors with a wide range of band gaps ranging from 0.739 to 2.884 eV. We show that TiSO, ZrSO, and HfSO monolayers are promising candidates for photocatalysis because of their suitable band gaps and optimal redox potentials for water splitting, and ZrSeS and HfSeS monolayers are suitable candidates for nanoscale electronics because of their high carrier mobility. We further show that TiSO, ZrSO, and ZrSeO monolayers possess large piezoelectric properties because of the broken inversion symmetry stemmed from the different atomic sizes and electronegativities of the X and Y elements, which are better or comparable to other 2D and bulk piezoelectric materials. Our study demonstrates that the 2D Janus MXYs may find versatile applications into photocatalysts, electronics, sensors, and energy harvesting/conversion.

We derive the effective single-band Hamiltonian in the flat NiO2 planes for nickelate compounds Nd1−xSrxNiO2. We first implement the first-principles calculation to study electronic structures of nickelates using the Heyd-Scuseria-Ernzerhof hybrid density functional and derive a three-band Hubbard model for Ni-O pdσ bands of Ni + 3d x 2 −y 2 and O 2− 2p x/y orbitals in the NiO2 planes. To obtain the effective one-band t-t -J model Hamiltonian, we perform the exact diagonalization of the three-band Hubbard model for the Ni5O16 cluster and map the low-energy spectra onto the effective one-band models. We find that the undoped NiO2 plane is a Hubbard Mott insulator, and the doped holes primarily locate on Ni sites. The physics of the NiO2 plane is a doped Mott insulator, described by the one-band t-t -J model with t = 265 meV, t = −21 meV and J = 28.6 meV. We also discuss the electronic structure for the "self-doping" effect and heavy fermion behavior of electron pockets of Nd 3+ 5d character in Nd1−xSrxNiO2. arXiv:1909.07427v2 [cond-mat.supr-con]

Active catalysts for nitrogen fixation (N2-fixation) have been widely pursued through constant efforts for industrial applications. Here, we report a family of catalysts, MXenes (M2X: M = Mo, Ta, Ti, and W; X = C and N), for application in N2-fixation based on density functional theory calculations. We find that the catalytic performance of MXenes strongly depends on the reaction energy in each reaction step. More exothermic steps lead to higher catalytic performance in the course of N2-fixation. We show that the reaction energy in N2-fixation is strongly affected by the charge transfer: (1) if N atoms gain more electrons in a step, the reaction is exothermic with a larger reaction energy; (2) if N atoms lose electrons in a step, the reaction is endothermic in general. We further show that Mo2C and W2C are highly active for N2-fixation due to their exothermic reactions and strong charge transfer, which may be applicable in the chemical-engineering industry.

Layer-number-dependent performance of metal–semiconductor junctions (MSJs) with multilayered two-dimensional (2D) semiconductors has attracted increasing attention for their potential in ultrathin electronics and optoelectronics. However, the mechanism of the interaction and the resulting charge transfer/redistribution at the two kinds of interfaces in MSJ with multilayered 2D semiconductors, namely, the metal–semiconductor (M–S) and the semiconductor–semiconductor (S–S) interfaces, have not been well understood until now, although that is important for the overall Schottky barrier height and the energy-band-offset between different layers of the 2D semiconductors. Here, based on state-of-the-art density functional theory calculations, the mechanisms of bonding and asymmetric electron redistribution at the M–S and S–S interfaces of metal–bilayer MoS2 junctions are revealed. Multiple mechanisms collectively contribute to the electron redistribution at the two kinds of interfaces, and the dominant mechanism depends on both the dimensionality (2D vs 3D) and the work function of metal electrodes. For the M–S interface, the pushback effect and metal-induced gap states play a dominant role for MSJs with 3D metal, while the covalent-like quasi-bonding feature appears for MSJs with medium-work-function 2D metals, and charge transfer plays a main role for MSJs with 2D metals that have very large or small work functions. For the S–S interface, it inherits the electron-redistribution behavior of the M–S interface for MSJs with 2D metal, while opposite electron-redistribution appears in MSJs with 3D metal. These mechanisms provide general insights and new concepts to better understand and use MSJs with multilayered 2D semiconductors.