Preparation, structural and sintering properties of AZO nanoparticles by sol-gel combustion method

Wang, Jing; Cao, Xin; Liu, Shimin; Guo, Yu‐Guo; Wang, Zhinuo; Li, Xiaotong; Ren, Yuanwen; Xia, Zelin; Wang, Hualin; Liu, Chaoqian; Wang, Nan; Jiang, Weiwei; Ding, Wanyu; Zhang, Zhihua

doi:10.1016/j.ceramint.2020.04.068

Cited by 10 publications

(3 citation statements)

References 36 publications

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“…The film is quiet. Wang et al [ 57 ] successfully prepared AZO nanoparticles using a novel sol–gel combustion method to investigate the effects of morphology, composition, and sintering activity. The results showed that the crystallinity of the AZO nanoparticles increased with increasing calcination temperature without forming other new phases.…”

Section: Preparation Of Azo Thin Filmsmentioning

confidence: 99%

Progress in the Synthesis and Application of Transparent Conducting Film of AZO (ZnO:Al)

Zhang

et al. 2023

Materials

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Due to the excellent performance and low cost of the new aluminum-doped zinc oxide (AZO) film, it is expected to replace the mature indium-doped tin oxide (ITO) film. The research status and progress of AZO transparent conductive films are summarized in this review. Moreover, the structure, optoelectronic properties, and conductive mechanism of AZO thin films are also detailed. The thin films’ main preparation processes and the advantages and disadvantages of each process method are mainly discussed, and their application fields are expounded. AZO thin films with multicomponent composite structures are one of the promising development directions in transparent conductive oxide (TCO) thin films. The development of various preparation processes has promoted the production and application of thin films on a broad scale. Finally, some improvement schemes have been proposed to improve the comprehensive performance of the film. The industrialization prospects of the AZO film, as well as its great development potential in the digital world, are discussed.

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Section: Preparation Of Azo Thin Filmsmentioning

confidence: 99%

Progress in the Synthesis and Application of Transparent Conducting Film of AZO (ZnO:Al)

Zhang

et al. 2023

Materials

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“…In the substitute group, doped ZnO is considered to be the utmost promising candidate for its low cost, non-toxicity, high optical bandgap. ZnO doped with Al, Ga, B, In, and so forth show very similar electrical and optical properties to conventional ITO. ,, Al-doped ZnO thin films (AZO), being low-cost, are extensively used in a wide range of photonic devices such as flat panel display, solar cell, LED, and so forth. − Various vacuum-assisted deposition processes such as sputtering, pulsed laser deposition, electron beam evaporation, and so forth as well as non-vacuum-aided technique such as spray pyrolysis, chemical vapor deposition, sol–gel, and so forth are reported aplenty for the deposition AZO film. However, all these techniques require elevated temperature at some stage to have high quality AZO film with a higher figure of merit (FOM) value.…”

Section: Introductionmentioning

confidence: 99%

Interaction of an Ultrathin Zinc Surface Passivation Layer with a Room Temperature-Deposited Al-Doped ZnO Film Leading to Highly Improved Electrical Transport Properties

Pal

Basak

2023

J. Phys. Chem. C

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In this study, we have demonstrated the interaction of an ultrathin Zn surface passivation layer with a room temperature (RT)-deposited Al-doped ZnO (AZO) film, leading to highly improved electrical transport properties. The resistivity of the AZO film increases monotonically with time in ambient conditions (from 0.02 to 0.33 Ω·cm), while overlaying a 4 nm Zn layer on AZO film stabilizes the resistivity to a value of 4.56 × 10–3 Ω·cm, which decreases to a value of 2.40 × 10–3 Ω·cm for a 5.3 nm Zn overlayer. The remarkable enhancement in the electrical stability and the conductivity value is attributed to a probable diffusion of Zn species into the AZO films, passivating Zn vacancy (VZn) and forming Zn interstitial (Zni), Zni-VO donor complexes supported by RT Raman and X-ray photoelectron spectroscopy studies. Temperature-dependent resistivity measurement reveals the semiconducting behavior of the AZO films with 4 and 6 nm Zn overlayer, where the transport process is governed by thermally activated band conduction at and below RT (up to ∼247 K), followed by nearest-neighbor hopping and Mott variable range hopping mechanisms as the temperature goes down. The 5.3 nm Zn-coated AZO film shows metallic behavior at RT and a metal to semiconductor transition ∼220 K deviating from the Boltzmann conduction process due to electron–electron interaction phenomena.

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“…crystal structure changes, melting, glass transition, etc, TGA only measures changes caused by mass loss.DTA-TGA curves of the La-Mn-based xerogel sample dried at 90 o C are depicted in Fig.3. Once the curves are examined, there are small endothermic peaks at nearly 100°C, which is interrelated to the removal of physically adsorbed H 2 O from the xerogel structure[48] coming from precursors, citric acid monohydrate and distilled water (see Table1). It is also explicit that exothermic peaks range from 180°C to 280°C are existed and they are concerned to thermal combustion of organic groups[49] originating from citric acid monohydrate, and La-Mn xerogel's large peak at 262°C can be de ned as by the alteration of the chemical precursor type.…”

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confidence: 99%

Synthesis and Characterizations of LaMnO3 Perovskite Powders Using Sol-Gel Method 

Özkan

Türk

Çelik

2021

Preprint

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The present research demonstrates the synthesis and characterization of LaMnO3 perovskite powders using the sol-gel technique for dye-sensitive solar cell applications. With this respect, transparent solutions were prepared from La and Mn based precursors, distilled water and citric acid monohydrate. Ammonium hydroxide was incorporated into the La-Mn solution in order to neutralize/precipitate at 24oC for 1 hour in the air. The solution was allowed to evaporate on a hot plate device at 90 °C in the air. The obtained solutions were dried at 90 oC for 24 hours to form a xerogel structure, dried at 200 oC for 2 hours and consequently annealed at 500 and 850 oC for 2 hours in the air. Thermal, structural, microstructural, optical and magnetic properties of the powders were characterized through differential thermal analysis-thermogravimetry (DTA-TG), Fourier transform infrared (FTIR), X-ray diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), scanning electron microscopy (SEM), Malvern zeta sizer (PSD), UV-vis spectrometer and vibrating sample magnetometer (VSM). The obtained results indicate promise, especially the low band range, that LaMnO3 powders can be used in dye-sensitized solar cells and can positively affect performance and efficiency.

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Preparation, structural and sintering properties of AZO nanoparticles by sol-gel combustion method

Cited by 10 publications

References 36 publications

Progress in the Synthesis and Application of Transparent Conducting Film of AZO (ZnO:Al)

Progress in the Synthesis and Application of Transparent Conducting Film of AZO (ZnO:Al)

Interaction of an Ultrathin Zinc Surface Passivation Layer with a Room Temperature-Deposited Al-Doped ZnO Film Leading to Highly Improved Electrical Transport Properties

Synthesis and Characterizations of LaMnO3 Perovskite Powders Using Sol-Gel Method

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Preparation, structural and sintering properties of AZO nanoparticles by sol-gel combustion method

Cited by 10 publications

References 36 publications

Progress in the Synthesis and Application of Transparent Conducting Film of AZO (ZnO:Al)

Progress in the Synthesis and Application of Transparent Conducting Film of AZO (ZnO:Al)

Interaction of an Ultrathin Zinc Surface Passivation Layer with a Room Temperature-Deposited Al-Doped ZnO Film Leading to Highly Improved Electrical Transport Properties

Synthesis and Characterizations of LaMnO3 Perovskite Powders Using Sol-Gel&nbsp;Method&nbsp;

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Synthesis and Characterizations of LaMnO3 Perovskite Powders Using Sol-Gel Method