Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Padavala, Balabalaji; Frye, Clint D.; Ding, Zihao; Chen, Ruifen; Dudley, Michael; Raghothamachar, Balaji; Khan, Neelam; Edgar, James H.

doi:10.1016/j.solidstatesciences.2015.03.002

Cited by 18 publications

(29 citation statements)

References 13 publications

(11 reference statements)

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“…A similar trend in reduced peak widths with temperature and reactant flow ratios was also observed for BP films grown on 4H-SiC(0001) under identical conditions in our previous work. 22 However, the FWHM values calculated at identical temperatures and reactant flow rates were consistently narrower for AlN/sapphire compared to 4H-SiC(0001) substrate. The decrease in FWHM values with temperature on other types of AlN/sapphire substrates are shown in Supporting Information ( Figure S3).…”

Section: Resultsmentioning

confidence: 91%

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Padavala

Frye

Wang

et al. 2015

Crystal Growth & Design

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The boron phosphide (BP) semiconductor has many remarkable features, including high thermal neutron capture cross section of the 10 B isotope, making it attractive for neutron detection applications. Effective and efficient neutron detection require BP to also have high crystal quality with optimum electrical properties. Here, we present the heteroepitaxial growth of high quality BP films on a superior aluminum nitride(0001)/sapphire substrate by chemical vapor deposition. The effect of process variables on crystalline and morphological properties of BP was examined in detail. BP deposited at high temperatures and high reactant flow rate ratios produced films with increased grain size and improved crystalline orientation. Narrower full width at half-maximum values of BP Raman peaks (6.1 cm −1 ) and ω rocking curves (352 arcsec) compared to values in the literature confirm the high crystalline quality of produced films. The films were n-type with the highest electron mobility of 37.8 cm 2 /V·s and lowest carrier concentration of 3.15 × 10 18 cm −3 . Rotational twinning in BP due to degenerate epitaxy caused by 3-fold BP(111) on 6-fold AlN(0001) was confirmed by synchrotron white beam X-ray topography. This preliminary study showed that AlN is an excellent substrate for growing high quality BP epitaxial films with promising potential for further enhancement of BP properties.

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Section: Resultsmentioning

confidence: 91%

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Padavala

Frye

Wang

et al. 2015

Crystal Growth & Design

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“…B 12 P 2 was grown on 4H-SiC substrates miscut 4 • toward the (1100) plane over the temperature range of 1250-1450 • C in increments of 50 • C to coarsely optimize the growth temperature under these flow rates and this operating pressure. This particular miscut of 4H-SiC was chosen because it suppressed rotational twinning in films of the similar icosahedral B 12 As 2 [18,19] and cubic BP [12].…”

Section: Experimental Methodsmentioning

confidence: 99%

“…SiC is also now widely available. Although there have been several reports of BP growth on SiC [12,13,14,15], Lu, et al [11] have provided the only report of B 12 P 2 growth on SiC where BBr 3 and PBr 3 in H 2 was used to deposit B 12 P 2 on 6H-SiC. However, the maturity, quality and availability of bulk SiC substrates has greatly improved in the ten years since Lu et al's study.…”

Section: Introductionmentioning

confidence: 99%

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Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC

Frye

Saw

Padavala

et al. 2017

Journal of Crystal Growth

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Icosahedral boron phosphide (B 12 P 2) is a wide bandgap semiconductor (3.35 eV) that has been reported to "selfheal" from high-energy electron bombardment, making it attractive for potential use in radioisotope batteries, radiation detection, or in electronics in high radiation environments. This study focused on improving B 12 P 2 hetero-epitaxial films by growing on 4H-SiC substrates over the temperature range of 1250-1450 • C using B 2 H 6 and PH 3 precursors in a H 2 carrier gas. XRD scans and Laue transmission photographs revealed that the epitaxial relationship was (0001) 1120 B 12 P 2 (0001) 1120 4H-SiC. The film morphology and crystallinity were investigated as a function of growth temperature and growth time. At 1250 • C, films tended to form rough, polycrystalline layers, but at 1300 and 1350 • C, films were continuous and comparatively smooth (R RMS ≤ 7 nm). At 1400 or 1450 • C, the films grew in islands that coalesced as the films became thicker. Using XRD rocking curves to evaluate the crystal quality, 1300 • C was the optimum growth temperature tested. At 1300 • C, the rocking curve FWHM decreased with increasing film thickness from 1494 arcsec for a 1.1 μm thick film to 954 arcsec for a 2.7 μm thick film, suggesting a reduction in defects with thickness.

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“…Boron phosphide was deposited on both the substrates with silicon nitride window and a plain silicon substrate, which served as reference samples for the x-ray absorption spectroscopy measurements. The CVD setup and experimental methods used in this work have been described in greater detail elsewhere [24][25][26]. The precursor gases were ultra-high purity phosphine (99.999 %) and diborane (1 % in H 2 ) in an ultra-high purity hydrogen carrier gas.…”

Section: Sample Depositionmentioning

confidence: 99%

Exploiting the P L_2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin films

Huber¹,

Медведев²,

Meyer-Ilse³

et al. 2016

Opt. Mater. Express

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The transmission of cubic boron phosphide (c-BP) thin films, prepared by chemical vapor deposition (CVD), was evaluated near the phosphorous L 2,3 and boron K absorption edge. The c-BP films were analyzed with transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES), to study their structural and chemical properties. The TEM analysis reveals that c-BP initially grows in islands. The merging of the P L 2,3 , P K and B K absorption edges culminates in a sharp absorption feature starting at 130 eV, showing that c-BP can be used in applications that require a relatively transparent material in the energy range just below that absorption feature. Due to experimental constraints the samples were grown at a temperature significantly below the temperature for optimal crystal growth. XANES analysis showed that, as a result of the reduced crystal quality, the intensities of the absorption transitions are reduced compared to those in high quality crystalline reference samples. Optimizing the quality of the BP films will increase the contrast in transmission across the absorption edge. Prendergast, "Determining crystal phase purity in c-BP through x-ray absorption spectroscopy," Unpublished . 28. J. Underwood and E. Gullikson, "High-resolution, high-flux, user friendly VLS beamline at the ALS for the 50-1300 eV energy region," J. Electron Spectrosc. Relat. Phenom. 92, 265 -272 (1998). 29. E. M. Gullikson, S. Mrowka, and B. B. Kaufmann, "Recent developments in EUV reflectometry at the advanced light source," in "Emerging

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Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Cited by 18 publications

References 13 publications

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC

Exploiting the P L_2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin films

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